Influence of surface migration on the spatial resolution of pulsed laser atom probe tomography

2010 ◽  
Vol 108 (4) ◽  
pp. 044904 ◽  
Author(s):  
B. Gault ◽  
M. Müller ◽  
A. La Fontaine ◽  
M. P. Moody ◽  
A. Shariq ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Surface Migration

On the Field Evaporation Behavior of a Model Ni-Al-Cr Superalloy Studied by Picosecond Pulsed-Laser Atom-Probe Tomography

2008 ◽  
Vol 14 (6) ◽  
pp. 571-580 ◽  
Author(s):  
Yang Zhou ◽  
Christopher Booth-Morrison ◽  
David N. Seidman
Keyword(s):  
Atom Probe Tomography ◽  
Mass Spectra ◽  
Pulsed Laser ◽  
Picosecond Laser ◽  
Atom Probe ◽  
Resolving Power ◽  
Noise Levels ◽  
Thermally Activated ◽  
Mass Resolving Power

AbstractThe effects of varying the pulse energy of a picosecond laser used in the pulsed-laser atom-probe (PLAP) tomography of an as-quenched Ni-6.5 Al-9.5 Cr at.% alloy are assessed based on the quality of the mass spectra and the compositional accuracy of the technique. Compared to pulsed-voltage atom-probe tomography, PLAP tomography improves mass resolving power, decreases noise levels, and improves compositional accuracy. Experimental evidence suggests that Ni2+, Al2+, and Cr2+ ions are formed primarily by a thermally activated evaporation process, and not by post-ionization of the ions in the 1+ charge state. An analysis of the detected noise levels reveals that for properly chosen instrument parameters, there is no significant steady-state heating of the Ni-6.5 Al-9.5 Cr at.% tips during PLAP tomography.

Interfacial chemistry in an InAs/GaSb superlattice studied by pulsed laser atom probe tomography

2012 ◽  
Vol 100 (8) ◽  
pp. 083109 ◽  
Author(s):  
M. Müller ◽  
B. Gault ◽  
M. Field ◽  
G. J. Sullivan ◽  
G. D. W. Smith ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Interfacial Chemistry

scholarly journals Practical Determination of Spatial Resolution in Atom Probe Tomography

2009 ◽  
Vol 15 (S2) ◽  
pp. 12-13 ◽  
Author(s):  
TF Kelly ◽  
E Voelkl ◽  
BP Geiser
Keyword(s):  
Spatial Resolution ◽  
Atom Probe Tomography ◽  
Atom Probe

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Atomic scale characterization of buried InxGa1−xAs quantum dots using pulsed laser atom probe tomography

2008 ◽  
Vol 92 (23) ◽  
pp. 233115 ◽  
Author(s):  
M. Müller ◽  
A. Cerezo ◽  
G. D. W. Smith ◽  
L. Chang ◽  
S. S. A. Gerstl
Keyword(s):  
Quantum Dots ◽  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Atomic Scale ◽  
Scale Characterization

scholarly journals Evidence of Superparamagnetic Co Clusters in Pulsed Laser Deposition-Grown Zn0.9Co0.1O Thin Films Using Atom Probe Tomography

2011 ◽  
Vol 133 (5) ◽  
pp. 1451-1458 ◽  
Author(s):  
Rodrigue Lardé ◽  
Etienne Talbot ◽  
Philippe Pareige ◽  
Herrade Bieber ◽  
Guy Schmerber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Laser Deposition

Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography

2006 ◽  
Vol 85 (3) ◽  
pp. 271-275 ◽  
Author(s):  
D.E. Perea ◽  
J.L. Lensch ◽  
S.J. May ◽  
B.W. Wessels ◽  
L.J. Lauhon
Keyword(s):  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Semiconductor Nanowires ◽  
Composition Analysis

Doping Profile Measurements in a 65-nm Commercial Product Using Atom Probe Tomography

2008 ◽  
Author(s):  
Lev Klibanov ◽  
Dick James ◽  
Dieter Isheim
Keyword(s):  
Spatial Resolution ◽  
Atom Probe Tomography ◽  
Doping Concentration ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Doping Profile ◽  
Commercial Product ◽  
Microscopy Technique ◽  
Compositional Information

Abstract Doping profile measurements in extremely small features like transistor gates or source/drain regions is a challenging task for the semiconductor industry. In our article, we successfully used an atom probe tomography (APT) tool to measure the doping concentration and profile of the dopant elements in a commercial 65 nm product. APT not only delivers doping concentrations but also gives the highest spatial resolution (sub-1 nm) three-dimensional compositional information of any microscopy technique.

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