Annealing behaviors of dislocation loops near the projected range in high‐dose As+‐ implanted (001)Si

1990 ◽  
Vol 68 (9) ◽  
pp. 4503-4507 ◽  
Author(s):  
S. N. Hsu ◽  
L. J. Chen ◽  
S. C. Wu
Keyword(s):  
High Dose ◽  
Dislocation Loops ◽  
Projected Range

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Iridium Silicides Formation on High Doses Ge+ Implanted Si Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Curello ◽  
R. Gwilliam ◽  
M. Harry ◽  
R. J. Wilson ◽  
B. J. Sealy ◽  
...  
Keyword(s):  
Low Dose ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Sige Layer ◽  
Thermal Reaction ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range

AbstractIn this work iridium silicidation of high dose Ge+ implanted Si layers has been studied. Compositional graded SiGe layers with a Ge peak concentration between 6 at.% and 12 at.% have been fabricated using 200 keV Ge+ ion implantation into (100) Si. A 20 nm thick Ir film was then deposited by e-beam evaporation with thermal reaction being performed to both regrow the implantation damage and form the silicide. The crystal quality of the SiGe layer and its interaction with the Ir film have been studied by cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS).Solid Phase Epitaxial Growth (SPEG) in the low dose case has produced a defect free SiGe layer with the formation of the IrSi phase. The annealing ambient was found to be critical for the silicidation. For the high dose case, as expected, strain relaxation related defects were observed to nucleate at a depth close to the projected range of the Ge+ implant and to extend up to the surface. A second rapid thermal annealing at higher temperatures, performed in forming gas, consumed most of the defective layer moving the silicide interface closer to the peak of the Ge distribution. A second low dose Ge+ implant following the metal deposition has been found to have a beneficial effect on the quality of the final interface. An amorphizing 500 keV Si+ implant followed by SPEG has finally been used to move the end of range defects far from the interface.

Ion Beam Induced Intermixing of Wsi0.45 on GaAs

1988 ◽  
Vol 128 ◽  
Author(s):  
S. J. Pearton ◽  
K. T. Short ◽  
K. S. Jones ◽  
A. G. Baca ◽  
C. S. Wu
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Ion Beam ◽  
Dose Range ◽  
Device Fabrication ◽  
Electrical Activation ◽  
High Dose ◽  
Dislocation Loops ◽  
Semiconductor Interface ◽  
High Level

ABSTRACTThe systematics of ion beam induced intermixing of WSi0.45 on GaAs have been studied after through-implantation of Si or O in the dose range 1013 − 5 × 1016 cm−2. SIMS profiling shows significant knock-on of Si and W into the GaAs at the high dose range in accordance with Monte Carlo simulations, but there is virtually no electrical activation (≤0.1%) of this Si after normal implant annealing (900°C, 10 sec). This appears to be a result of the high level of disorder near the metal-semiconductor interface, which is not repaired by annealing. This damage consists primarily of dislocation loops extending a few hundred angstroms below the end of range of the implanted ions. Extrapolation of the ion doses used in this work to the usual doses used in GaAs device fabrication would imply that ion-induced intermixing of WSix will not be significant in through-implantation processes.

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 439 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2x 1014 to 5x1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Formation of Nanovoids and Nanocolumns in High Dose Hydrogen Implanted ZnO Bulk Crystals

2006 ◽  
Vol 957 ◽  
Author(s):  
Rajendra Singh ◽  
R. Scholz ◽  
U. Gösele ◽  
S. H. Christiansen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Dose ◽  
Hydrogen Ions ◽  
Bulk Crystals ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron ◽  
Wafer Surfaces ◽  
Post Implantation

ABSTRACTZnO(0001) bulk crystals were implanted with 100 keV H2+ ions with various doses in the range of 5×1016 to 3×1017 cm-2. The ZnO crystals implanted up to a dose of 2.2×1017 cm-2 did not show any surface exfoliation, even after post-implantation annealing at temperatures up to 800°C for 1 h while those crystals implanted with a dose of 2.8×1017 cm-2 or higher exhibited exfoliated surfaces already in the as-implanted state. In a narrow dose window in between, controlled exfoliation could be obtained upon post-implantation annealing only. Cross-sectional transmission electron microscopy (XTEM) of the implanted ZnO samples showed that a large number of nanovoids were formed within the implantation-induced damage band. These nanovoids served as precursors for the formation of microcracks leading to the exfoliation of ZnO wafer surfaces. In addition to the nanovoids, elongated nanocolumns perpendicular to the ZnO wafer surfaces were also observed. These nanocolumns showed diameters of up to 10 nm and lengths of up to 500 nm. The nanocolumns were found in the ZnO wafer even well beyond the projected range of hydrogen ions.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Defect-Characterization in Implanted Locos + Trench-Isolated Structures

1991 ◽  
Vol 239 ◽  
Author(s):  
N. David Theodore ◽  
Barbara Vasquez ◽  
Peter Fejes
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
High Dose ◽  
Defect Characterization ◽  
Dislocation Loops ◽  
Etch Pits ◽  
Local Oxidation ◽  
Silicon Integrated Circuits ◽  
Trench Isolation ◽  
Dislocation Sources

ABSTRACTAs device dimensions decrease in silicon integrated-circuits, conventional LOCOS (local-oxidation of silicon) isolation becomes inadequate to meet dimensional demands. Variations on LOCOS are therefore being explored for further miniaturization of devices. One such variation involves poly-buffered LOCOS + trench-isolation (PBLT). In this study, PBLT structures were characterized using TEM. Wright-etched cross-section SEM micrographs showed etch-pits associated with a combination of high-dose (> 5E14 cm-2) phosphorous implants and PBLT isolation. TEM characterization showed that dislocations were formed in the structures for a combination of high-dose (1E15 cm-2) phosphorous implants (followed by an anneal) and PBLT isolation. Structures exposed to lower-dose (1E14 cm-2) implants showed no defects and neither did 1E15 implanted structures prior to annealing. The results are modelled in terms of the stress configurations present in the structures, and in terms of dislocation-sources resulting from implantation-related dislocation-loops. The dislocation-sources operate in the presence of stresses associated with the isolation-trenches. Glide-loops form, which then grow in response to stresses in the structures and dislocations result on glide planes.

Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 303-308 ◽  
Author(s):  
N. Cherkashin ◽  
Martin J. Hÿtch ◽  
Fuccio Cristiano ◽  
A. Claverie
Keyword(s):  
Electron Microscopy ◽  
Geometric Phase ◽  
Low Energy ◽  
High Dose ◽  
Dislocation Loops ◽  
Weak Beam ◽  
Transmission Electron ◽  
Geometric Phase Analysis

In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].

On the Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Alain Claverie ◽  
Filadelfo Cristiano ◽  
Benjamin Colombeau ◽  
Nicholas Cowern
Keyword(s):  
Formation Energy ◽  
Ostwald Ripening ◽  
High Dose ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Dynamical Equilibrium ◽  
Defect Interactions ◽  
Small Clusters ◽  
Dose Levels ◽  
Extrinsic Defects

AbstractIn this paper, we discuss the mechanisms by which small clusters evolve through “magic” sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. The calculation of the supersaturation of free Si-interstitials in dynamical equilibrium with these defects shows a hierarchy of levels of nonequilibrium diffusion, ranging from supersaturations S of about 106 in the presence of small clusters, through 103 in the presence of {113} defects, to S in the range 100 down to 1 as loops are formed, evolve and finally evaporate. A detailed analysis of defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and modelling defect interactions during TED of dopants in silicon.

Sign in / Sign up

Export Citation Format

Share Document