scholarly journals Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

2010 ◽  
Vol 107 (11) ◽  
pp. 114303 ◽  
Author(s):  
V. Ramesh ◽  
A. Kikuchi ◽  
K. Kishino ◽  
M. Funato ◽  
Y. Kawakami
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Relaxation Effect ◽  
Multiple Quantum

scholarly journals Thermal Interdiffusion in InGaAs/GaAs Strained Multiple Quantum Well Infrared Photodetector

1997 ◽  
Vol 484 ◽  
Author(s):  
Alex S. W. Lee ◽  
E. Herbert Li ◽  
Gamani Karunasiri
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Annealing Process ◽  
Multiple Quantum ◽  
Optical And Electrical Properties ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Order Of Magnitude ◽  
Band Mixing

AbstractRTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and electrical properties of strained InGaAs/GaAs quantum well infrared photodetector. Photoluminescence measurement at 4.5 K shows that no strain relaxation or misfit dislocation formation occurs throughout the annealing process. Absorption and responsivity peak wavelengths are red shifted continuously without appreciable degradation in absorption strength. The normal incident absorption, which is believed to be the result of band-mixing effects induced by the coupling between the conduction and valence and is usually forbidden in conventional polarization selection rule, is preserved after interdiffusion. Responsivity spectra of both 0° and 90° polarization are of compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is not very sensitive to temperature variation and is found to be an order of magnitude larger than the as-grown one at 77K.

scholarly journals Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Nanophotonics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 317-322 ◽  
Author(s):  
Yiyu Ou ◽  
Daisuke Iida ◽  
Jin Liu ◽  
Kaiyu Wu ◽  
Kazuhiro Ohkawa ◽  
...  
Keyword(s):  
Extraction Efficiency ◽  
Internal Quantum Efficiency ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Relaxation Effect ◽  
Indium Content ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Multiple Quantum ◽  
Emission Enhancement

AbstractWe have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

Heavily Carbon Doped P-Type GaAs/InGaAs Strained-Layer Superlattices Grown by Mombe

1992 ◽  
Vol 281 ◽  
Author(s):  
Ming Qi ◽  
Jinsheng Luo ◽  
J. Shirakashi ◽  
E. Tokumitsu ◽  
S. Nozaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hole Concentration ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Base Layer ◽  
Multiple Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Carbon Doped ◽  
Strained Layer Superlattices

ABSTRACTHeavily carbon doped ρ-type GaAs/In0.3Ga0.7 As strained-layer superlattices (SLSs) with hole concentrations as high as 1 × 1020 / cm3 were successfully grown for the first time by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic and solid indium. The single quantum well (SQW) and multiple quantum well (MQW) structures with different well width from 2 to 16nm were also designed to analyse the strain relaxation. The experimental results show that the SLS structures made of heavily carbon doped ρ—type GaAs and InGaAs have both of high hole concentration and small effective bandgap, which are satisfied for the application in heterojunction bipolar transistors (HBTs) as base layer.

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