Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion‐implanted and amorphous thin layers

1990 ◽  
Vol 67 (6) ◽  
pp. 2822-2830 ◽  
Author(s):  
I. Alex Vitkin ◽  
Constantinos Christofides ◽  
Andreas Mandelis
Keyword(s):  
Temperature Dependence ◽  
Thin Layers ◽  
Signal Generation ◽  
Lattice Temperature ◽  
Ion Implanted

Amorphization Processes in Ion Implanted Si: Temperature Dependence

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3617-3620 ◽  
Author(s):  
Teruaki Motooka ◽  
Fumihiko Kobayashi ◽  
Paul Fons ◽  
Takashi Tokuyama ◽  
Tadashi Suzuki ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ion Implanted

The Influence of Boundary Conditions and Surface Layer Thickness on Dielectric Relaxation of Liquid Crystals Confined in Cylindrical Pores

2000 ◽  
Vol 651 ◽  
Author(s):  
Z. Nazario ◽  
G. P. Sinha ◽  
F.M. Aliev
Keyword(s):  
Liquid Crystal ◽  
Boundary Conditions ◽  
Temperature Dependence ◽  
Layer Thickness ◽  
Dielectric Spectroscopy ◽  
Relaxation Times ◽  
Thin Layers ◽  
Short Axis ◽  
Librational Mode ◽  
Cylindrical Pores

AbstractDielectric spectroscopy was applied to investigate the dynamic properties of liquid crystal octylcyanobiphenyl (8CB) confined in 2000 Å cylindrical pores of Anopore membranes with homeotropic and axial (planar) boundary conditions on the pore walls. Homeotropic boundary conditions allow the investigation of the librational mode in 8CB by dielectric spectroscopy. We found that the dynamics of the librational mode is totally different from the behavior observed in investigations of relaxation due to reorientation of molecules around their short axis. The interpretation of the temperature dependence of relaxation times and of the dielectric strength of the librational mode needs the involvement of the temperature dependence of orientational order parameter. For samples with axial boundary conditions, layers of LCs with different thickness were obtained on the pore walls as a result of controlled impregnation of porous matrices with 8CB from solutions of different liquid crystal concentration. The process due to rotation of molecules around their short axis with single relaxation time observed for bulk 8CB is replaced by a process with a distribution of relaxation times in thin layers. This relaxation process broadens with decreasing layer thickness.

Materials Optimization for Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometry

2007 ◽  
Vol 989 ◽  
Author(s):  
Dean Levi ◽  
Eugene Iwanizcko ◽  
Steve Johnston ◽  
Qi Wang ◽  
Howard M Branz
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Spectroscopic Ellipsometry ◽  
Surface Passivation ◽  
Light Trapping ◽  
Chemical Vapor ◽  
Thin Layers ◽  
Silicon Substrates

AbstractOur research team has used hot wire chemical vapor deposition (HWCVD) to fabricate silicon heterojunction (SHJ) solar cells on p-type FZ silicon substrates with efficiencies as high as 18.2%. The best cells are deposited on anisotropically-textured (100) silicon substrates where an etching process creates pyramidal facets with (111) crystal faces. Texturing increases Jsc through enhanced light trapping, yet our highest Voc devices are deposited on un-textured (100) substrates. One of the key factors in maximizing the efficiency of our SHJ devices is the process of optimization of the material properties of the 3 - 5 nm thick hydrogenated amorphous silicon (a-Si:H) layers used to create the junction and back contact in these cells. Such optimization is technically challenging because of the difficulty in measuring the properties of extremely thin layers. This difficulty is compounded by the fact that the properties of such amorphous layers are substrate- and thickness-dependent. In this study, we have utilized spectroscopic ellipsometry (SE) and photoconductivity decay to conclude that a-Si:H films grown on (111) substrates are substantially similar to films grown on (100) substrates. In addition, analysis of the substrate temperature dependence of surface roughness evolution reveals a substrate-independent mechanism of surface smoothening with an activation energy of 0.28 eV. Analysis of the substrate temperature dependence of surface passivation reveals a passivation mechanism with an activation energy of 0.63 eV.

AC MEASUREMENTS ON COEVAPORATED GeO2/BaO THIN FILMS

1994 ◽  
Vol 08 (23) ◽  
pp. 1453-1459
Author(s):  
M.Y. NADEEM
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Thin Layers ◽  
Hopping Conduction ◽  
Frequency Range ◽  
Temperature Conduction ◽  
Ac Conductance ◽  
Metallic Electrodes

The frequency and temperature dependence of the ac conductance and the capacitance are studied in the frequency range of 1 to 20 kHz for the coevaporated GeO 2/ BaO thin layers sandwiched between Al metallic electrodes. The measurements are undertaken to establish the low temperature conduction in these diode structures as the electronic hopping conduction. The activation energy involved in this mechanism is evaluated.

Temperature dependence of FT-IR absorption and Raman scattering of copper phthalocyanine thin layers deposited on silicon substrate

2006 ◽  
Vol 782 (2-3) ◽  
pp. 177-182 ◽  
Author(s):  
W. Bała ◽  
A. Grodzicki ◽  
P. Piszczek ◽  
M. Wojdyła ◽  
A. Bratkowski ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Silicon Substrate ◽  
Copper Phthalocyanine ◽  
Thin Layers ◽  
Ir Absorption ◽  
Ft Ir

Magnetic state of ion implanted layer in garnet bubble film: Temperature dependence study

1981 ◽  
Vol 17 (6) ◽  
pp. 2920-2922 ◽  
Author(s):  
G. Suran ◽  
R. Krishnan ◽  
P. Gerard ◽  
H. Jouve
Keyword(s):  
Temperature Dependence ◽  
Magnetic State ◽  
Ion Implanted

Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: a molecular dynamics study

2014 ◽  
Vol 16 (29) ◽  
pp. 15551-15557 ◽  
Author(s):  
Xuefeng Lu ◽  
Hongjie Wang ◽  
Yin Wei ◽  
Jiangbo Wen ◽  
Min Niu ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Strain Rate ◽  
Mechanical Behavior ◽  
Temperature Dependence ◽  
Basal Plane ◽  
Thin Layers ◽  
Nano Silicon

The extreme strain rate and temperature dependence of the mechanical behavior of nano silicon nitride thin layers in a basal plane are determined.

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