Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1

1990 ◽  
Vol 67 (1) ◽  
pp. 344-352 ◽  
Author(s):  
T. Y. Wang ◽  
G. B. Stringfellow
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Strain Effects

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 393-396
Author(s):  
Guangxu Ju ◽  
Yoshihiro Kato ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
X Ray

In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

2014 ◽  
Vol 115 (9) ◽  
pp. 094906 ◽  
Author(s):  
Guangxu Ju ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
Hiroshi Amano
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Organic Vapor ◽  
Metal Organic

Optical studies of ZnSe-ZnSGaAs(100) single quantum wells grown by photo-assisted vapor phase epitaxy

1995 ◽  
Vol 96 (10) ◽  
pp. 793-798 ◽  
Author(s):  
V.V. Tishchenko ◽  
Y.S. Raptis ◽  
E. Anastassakis ◽  
N.V. Bondar
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Optical Studies

Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy

1987 ◽  
Vol 51 (12) ◽  
pp. 910-912 ◽  
Author(s):  
K. W. Carey ◽  
R. Hull ◽  
J. E. Fouquet ◽  
F. G. Kellert ◽  
G. R. Trott
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document