Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy

1989 ◽  
Vol 66 (11) ◽  
pp. 5376-5383 ◽  
Author(s):  
T. Y. Wang ◽  
E. H. Reihlen ◽  
H. R. Jen ◽  
G. B. Stringfellow
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

2010 ◽  
Vol 208 (2) ◽  
pp. 445-448 ◽  
Author(s):  
Naoki Furukawa ◽  
Atsushi Nishikawa ◽  
Takashi Kawasaki ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy

1987 ◽  
Vol 51 (12) ◽  
pp. 910-912 ◽  
Author(s):  
K. W. Carey ◽  
R. Hull ◽  
J. E. Fouquet ◽  
F. G. Kellert ◽  
G. R. Trott
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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