Change in the optical‐absorption coefficient induced by optical modulation of the internal electric field in doping‐modulated amorphous silicon multilayers

1990 ◽  
Vol 67 (10) ◽  
pp. 6476-6480 ◽  
Author(s):  
Hidetoshi Oheda
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Absorption Coefficient ◽  
Amorphous Silicon ◽  
Optical Absorption Coefficient ◽  
Optical Modulation ◽  
Internal Electric Field ◽  
In Doping

Origin of photoconductivity oscillations in CdS and CuCl

1968 ◽  
Vol 46 (7) ◽  
pp. 829-832 ◽  
Author(s):  
R. R. Haering ◽  
I. P. Batra
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Absorption Coefficient ◽  
Applied Electric Field ◽  
Incident Radiation ◽  
Longitudinal Optical ◽  
Optical Absorption Coefficient ◽  
Optical Phonons ◽  
Adequate Explanation ◽  
Field Dependent

An oscillatory dependence of photoconductivity on photon energy has been observed in many semiconductors. In some semiconductors the amplitude of the oscillations depends strongly on the magnitude of the applied electric field, while in others it is independent of the electric field. Field-dependent oscillations have been successfully accounted for in the literature but no adequate explanation has been offered so far for the second type of oscillations. We propose that these oscillations are the result of variations in the optical absorption coefficient arising from exciton formation by second- or higher-order processes involving longitudinal optical phonons as well as the incident radiation.

Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 1008-1014 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Noboru Nakamura ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
Yasuo Kishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Amorphous Silicon ◽  
Optical Absorption Coefficient ◽  
Optical Gap ◽  
Silicon Thin Films

scholarly journals Optical Absorption Coefficient of a Dispersion of Clusters Composed of a Large Number of Spheres

1987 ◽  
Vol 6 (2) ◽  
pp. 173-181 ◽  
Author(s):  
F. Borghese ◽  
P. Denti ◽  
R. Saija ◽  
G. Toscano ◽  
O. I. Sindoni
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Optical Absorption Coefficient

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

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