Simple theoretical analysis of the interband optical absorption coefficient in wide-gap semiconductors in the presence of an external electric field and its dependence on a longitudinal magnetic field

2006 ◽  
Vol 382 (1-2) ◽  
pp. 26-37 ◽  
Author(s):  
P.K. Chakraborty ◽  
S. Ghoshal ◽  
K.P. Ghatak
1968 ◽  
Vol 46 (7) ◽  
pp. 829-832 ◽  
Author(s):  
R. R. Haering ◽  
I. P. Batra

An oscillatory dependence of photoconductivity on photon energy has been observed in many semiconductors. In some semiconductors the amplitude of the oscillations depends strongly on the magnitude of the applied electric field, while in others it is independent of the electric field. Field-dependent oscillations have been successfully accounted for in the literature but no adequate explanation has been offered so far for the second type of oscillations. We propose that these oscillations are the result of variations in the optical absorption coefficient arising from exciton formation by second- or higher-order processes involving longitudinal optical phonons as well as the incident radiation.


1987 ◽  
Vol 6 (2) ◽  
pp. 173-181 ◽  
Author(s):  
F. Borghese ◽  
P. Denti ◽  
R. Saija ◽  
G. Toscano ◽  
O. I. Sindoni

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.


1996 ◽  
Vol 426 ◽  
Author(s):  
B. Pashmakov ◽  
H. Fritzsche ◽  
B. Claflin

AbstractThe electrical conductance and optical absorption coefficient of microcrystalline indium oxide (c – In2 O 3-x ) can be changed reversibly by several orders of magnitude by photoreduction and reoxidation. Photoreduction is achieved by exposure to ultraviolet light hv ≥ 3.5eV in vacuum or an inert gas. The effects are similar to those previously observed in amorphous In2 O3-x


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