Phase modulation in GaAs/AlGaAs double heterostructures. II. Experiment

1990 ◽  
Vol 67 (11) ◽  
pp. 7006-7012 ◽  
Author(s):  
J. Faist ◽  
F.‐K. Reinhart
Keyword(s):  
Phase Modulation ◽  
Double Heterostructures

Comparison of phase modulation of GaAs/AlGaAs double heterostructures

1987 ◽  
Vol 23 (25) ◽  
pp. 1391 ◽  
Author(s):  
J. Faist ◽  
F.K. Reinhart ◽  
D. Martin
Keyword(s):  
Phase Modulation ◽  
Double Heterostructures

Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory

1990 ◽  
Vol 67 (11) ◽  
pp. 6998-7005 ◽  
Author(s):  
J. Faist ◽  
F.‐K. Reinhart
Keyword(s):  
Phase Modulation ◽  
Double Heterostructures

The observation of solutions in Ni3Nb

1988 ◽  
Vol 46 ◽  
pp. 540-541
Author(s):  
Z.M. Wang ◽  
J.P. Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Phase Modulation ◽  
High Resolution Electron Microscopy ◽  
Antiphase Domain ◽  
Boundary Area ◽  
Matrix Type ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Kontorova Model

High resolution electron microscopy reveals that antiphase domain boundaries in β-Ni3Nb have a hexagonal unit cell with lattice parameters ah=aβ and ch=bβ, where aβ and bβ are of the orthogonal β matrix. (See Figure 1.) Some of these boundaries can creep “upstairs” leaving an incoherent area, as shown in region P. When the stepped boundaries meet each other, they do not lose their own character. Our consideration in this work is to estimate the influnce of the natural misfit δ{(ab-aβ)/aβ≠0}. Defining the displacement field at the boundary as a phase modulation Φ(x), following the Frenkel-Kontorova model [2], we consider the boundary area to be made up of a two unit chain, the upper portion of which can move and the lower portion of the β matrix type, assumed to be fixed. (See the schematic pattern in Figure 2(a)).

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Channel Estimation Method Using Arbitrary Amplitude and Phase Modulation Schemes for MIMO Sensor

2014 ◽  
Vol E97.B (10) ◽  
pp. 2102-2109
Author(s):  
Tsubasa TASHIRO ◽  
Kentaro NISHIMORI ◽  
Tsutomu MITSUI ◽  
Nobuyasu TAKEMURA
Keyword(s):  
Channel Estimation ◽  
Phase Modulation ◽  
Estimation Method ◽  
Arbitrary Amplitude ◽  
Modulation Schemes

Next Generation Laser Voltage Probing

2008 ◽  
Author(s):  
Yin S Ng ◽  
William Lo ◽  
Kenneth Wilsher
Keyword(s):  
Phase Modulation ◽  
Phase Locked Loop ◽  
Next Generation ◽  
Solid Immersion Lens ◽  
User Friendliness ◽  
New Developments ◽  
Polarization Difference ◽  
Previous Generation ◽  
Mode Locked Laser ◽  
Optical Laser

Abstract We present an overview of Ruby, the latest generation of backside optical laser voltage probing (LVP) tools [1, 2]. Carrying over from the previous generation of IDS2700 systems, Ruby is capable of measuring waveforms up to 15GHz at low core voltages 0.500V and below. Several new optical capabilities are incorporated; these include a solid immersion lens (SIL) for improved imaging resolution [3] and a polarization difference probing (PDP) optical platform [4] for phase modulation detection. New developments involve Jitter Mitigation, a scheme that allows measurements of jittery signals from circuits that are internally driven by the IC’s onboard Phase Locked Loop (PLL). Additional timing features include a Hardware Phase-Locked Loop (HWPLL) scheme for improved locking of the LVP’s Mode-Locked Laser (MLL) to the tester clock as well as a clockless scheme to improve the LVP’s usefulness and user friendliness. This paper presents these new capabilities and compares these with those of the previous generation of LVP systems [5, 6].

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