Device geometry and temperature dependence of deep level transient spectroscopy spectra of GaAs metal‐semiconductor field‐effect transistors

1990 ◽  
Vol 67 (8) ◽  
pp. 3895-3897
Author(s):  
J. H. Zhao
Keyword(s):  
Temperature Dependence ◽  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Device Geometry ◽  
Transient Spectroscopy

Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device Simulation

2020 ◽  
Vol 1004 ◽  
pp. 627-634 ◽  
Author(s):  
Kohei Yamasue ◽  
Yuji Yamagishi ◽  
Yasuo Cho
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Device Simulation ◽  
Oxide Semiconductor ◽  
Field Effect Mobility ◽  
Interface Defect ◽  
Transient Spectroscopy ◽  
The Impact

It has recently been shown that interface defect density (Dit) at SiO2/SiC interfaces can have non-uniform clustered distribution through the measurement by local deep level transient spectroscopy (local DLTS). Here we investigate the influence of the non-uniform Dit clustering on the field-effect mobility in SiC metal-oxide-semiconductor field effect transistors (MOSFETs) by device simulation. We develop a three dimensional numerical model of a SiC MOSFET, which can incorporate actual Dit distributions measured by local DLTS. Our main result is that the impact of the non-uniform Dit clustering on field-effect mobility is negligible for a SiC MOSFET with high Dit formed by dry thermal oxidation but it becomes significant for that with lower Dit by post-oxidation annealing. The result indicates that channel mobility can be further improved by making Dit distribution uniform as well as reducing Dit.

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 436-439 ◽  
Author(s):  
Sebastian Roensch ◽  
Stefan Hertel ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Drain Current ◽  
Evaluation Procedure ◽  
Defect Centers ◽  
Effect Transistor ◽  
Transient Spectroscopy

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.

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