Erratum: “Thin-film transistors based on p-type Cu2O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]

2010 ◽  
Vol 96 (23) ◽  
pp. 239902 ◽  
Author(s):  
Elvira Fortunato ◽  
Vitor Figueiredo ◽  
Pedro Barquinha ◽  
Elangovan Elamurugu ◽  
Raquel Barros ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Thin-film transistors based on p-type Cu2O thin films produced at room temperature

2010 ◽  
Vol 96 (19) ◽  
pp. 192102 ◽  
Author(s):  
Elvira Fortunato ◽  
Vitor Figueiredo ◽  
Pedro Barquinha ◽  
Elangovan Elamurugu ◽  
Raquel Barros ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Films ◽  
P Type

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Tunable electrical properties of NiO thin films and p-type thin-film transistors

2015 ◽  
Vol 592 ◽  
pp. 195-199 ◽  
Author(s):  
Yongyue Chen ◽  
Yajie Sun ◽  
Xusheng Dai ◽  
Bingpo Zhang ◽  
Zhenyu Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
P Type

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

Charge Transport in Pentacene Thin Film Transistors

2001 ◽  
Vol 665 ◽  
Author(s):  
J. H. Schön ◽  
L. D. Buchholz ◽  
Ch. Kloc ◽  
B. Batlogg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Nanocrystalline Material ◽  
Hole Mobility ◽  
Grain Sizes

ABSTRACTThe charge transport properties in polycrystalline pentacene thin film transistors is investigated. A potential barrier is formed at grain boundaries due charged trapping states. The influence of such grain boundaries on the hole mobility of the devices is analyzed for different grain sizes, trap concentrations, and carrier densities. The results reveal that room temperature mobilities exceeding 0.5 cm2/Vs can be obtained in thin films with large grains as well as in nanocrystalline material. Consequently, single crystal device limits can be reached also by polycrystalline pentacene thin film transistors.

p-Type ${\hbox{Cu}}_{x}{\hbox{O}}$ Films Deposited at Room Temperature for Thin-Film Transistors

2012 ◽  
Vol 8 (1) ◽  
pp. 41-47 ◽  
Author(s):  
V. Figueiredo ◽  
E. Elangovan ◽  
R. Barros ◽  
J. V. Pinto ◽  
T. Busani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
P Type
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