Plasma‐induced fixed oxide charge

1989 ◽  
Vol 66 (3) ◽  
pp. 1244-1251 ◽  
Author(s):  
Jan Bos ◽  
Menso Hendriks
Keyword(s):  
Oxide Charge

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

1999 ◽  
Vol 75 (5) ◽  
pp. 734-736 ◽  
Author(s):  
Nian-Kai Zous ◽  
Tahui Wang ◽  
Chih-Chich Yeh ◽  
C. W. Tsai ◽  
Chimoon Huang
Keyword(s):  
Leakage Current ◽  
Transient Effects ◽  
Oxide Charge ◽  
Stress Induced Leakage Current ◽  
Tunnel Oxides

scholarly journals Perspective on Predominant Metal Oxide Charge Transporting Materials for High-Performance Perovskite Solar Cells

2021 ◽  
Vol 8 ◽  
Author(s):  
Mriganka Singh ◽  
Chih Wei Chu ◽  
Annie Ng
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Charge Transport ◽  
High Performance ◽  
Collection Efficiency ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Future Research ◽  
Charge Collection Efficiency ◽  
Oxide Charge

Nowadays, the power conversion efficiency of organometallic mixed halide perovskite solar cells (PSCs) is beyond 25%. To fabricate highly efficient and stable PSCs, the performance of metal oxide charge transport layers (CTLs) is one of the key factors. The CTLs are employed in PSCs to separate the electrons and holes generated in the perovskite active layer, suppressing the charge recombination rate so that the charge collection efficiency can be increased at their respective electrodes. In general, engineering of metal oxide electron transport layers (ETLs) is found to be dominated in the research community to boost the performance of PSCs due to the resilient features of ETLs such as excellent electronic properties, high resistance to thermal temperature and moisture, ensuring good device stability as well as their high versatility in material preparation. The metal oxide hole transport layers in PSCs are recently intensively studied. The performance of PSCs is found to be very promising by using optimized hole transport materials. This review concisely discusses the evolution of some prevalent metal oxide charge transport materials (CTMs) including TiO2, SnO2, and NiOx, which are able to yield high-performance PSCs. The article begins with introducing the development trend of PSCs using different types of CTLs, pointing out the important criteria for metal oxides being effective CTLs, and then a variety of preparation methods for CTLs as employed by the community for high-performance PSCs are discussed. Finally, the challenges and prospects for future research direction toward scalable metal oxide CTM-based PSCs are delineated.

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