scholarly journals Volume generation of negative ions in high density hydrogen discharges

1984 ◽  
Author(s):  
J. R. Hiskes ◽  
A. M. Karo
Keyword(s):  
2006 ◽  
Vol 36 (9) ◽  
pp. 1253-1263 ◽  
Author(s):  
NAMNI GOEL ◽  
GLENDA R. ETWAROO

Background. Bright light and high-density negative air ion exposure are efficacious for winter and non-seasonal depression compared with a low-density negative ion placebo. Similarly, auditory stimuli improve mood in clinical populations. This study compared the short-term effects of bright light, an auditory stimulus, and high- and low-density negative ions on mood and alertness in mildly depressed and non-depressed adults.Method. One hundred and eighteen subjects, 69 women and 49 men (mean age±S.D., 19·4±1·7 years), participated once across the year. Subjects were randomly assigned to one of four conditions: bright light (10000 lux; n=29), auditory stimuli (60 dB; n=30), or high-density (4·5×1014 ions/s flow rate; n=29) or low-density (1·7×1011 ions/s; n=30; placebo control) negative ions. Exposure was for 30 min on three consecutive evenings between 1900 and 2100 hours. Mood and alertness assessments, using standardized scales, occurred before, and 15 and 30 min during exposure. The Beck Depression Inventory classified subjects as depressed ([ges ]10; n=35) or non-depressed (<10; n=83).Results. The three active stimuli, but not the low-density placebo, reduced depression, total mood disturbance (a global affect measure) and/or anger within 15–30 min. Neither testing season nor degree of depressive symptoms affected response to stimuli.Conclusions. The auditory stimulus, bright light and high-density ions all produced rapid mood changes – with small to medium effect sizes – in depressed and non-depressed subjects, compared with the low-density placebo, despite equivalent pre-study expectations. Thus, these stimuli improve mood acutely in a student sample, including a subset with depressive symptoms.


1995 ◽  
Vol 406 ◽  
Author(s):  
H. Sugai ◽  
K. Nakamura ◽  
T. H. Ahn ◽  
M. Nakamur

AbstractAdvanced diagnostics of high-density inductively coupled plasmas (ICPs) are presented supporting the following three proposals of innovative etching modes: First, pulsed plasma etching mode can suppress charge-up on high-aspect-ratio micro-patterns. In order to understand the mechanism, time-resolved measurements of electrons, chlorine atoms and negative ions in a pulsed chlorine ICP are performed. As a result of electron cooling and negative ion yield in afterglow, electrons are found to be accelerated toward a rf-biased electrode, thus neutralizing positive surface charges on that. Second, downstream etching mode using C4F8 gas enables high etch selectivity of SiO2 to Si. The reason for this is qualitatively discussed using comprehensive measurements of spatial distributions of CF3, CF2, CF and F densities in CF4 and C4F8 plasmas. Third, hot wall etching mode also enables high selectibity etching in fluorocarbon plasmas. Radical diagnostics reveal that wall heating dramatically modifies the radical composition of both CF4 and C4F8 plasmas, and it improves the etch selectivity and reproducibility.


2018 ◽  
Author(s):  
Ryuta Endo ◽  
Shogo Ishihara ◽  
Toshikio Takimoto ◽  
Akira Tonegawa ◽  
Kohnosuke Sato ◽  
...  

1997 ◽  
Vol 36 (Part 2, No. 12B) ◽  
pp. L1702-L1705 ◽  
Author(s):  
Noriharu Takada ◽  
Daiyu Hayashi ◽  
Koichi Sasaki ◽  
Kiyoshi Kadota
Keyword(s):  

1984 ◽  
Vol 56 (7) ◽  
pp. 1927-1938 ◽  
Author(s):  
J. R. Hiskes ◽  
A. M. Karo
Keyword(s):  

Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).


Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.


Sign in / Sign up

Export Citation Format

Share Document