Two‐dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization

1989 ◽  
Vol 66 (5) ◽  
pp. 2049-2051 ◽  
Author(s):  
D. El‐Khatouri ◽  
A. Khater ◽  
M. Balkanski ◽  
C. Julien ◽  
J. P. Guesdon
Keyword(s):  
Low Temperatures ◽  
Weak Localization ◽  
Two Dimensional ◽  
Layered Semiconductor

Two‐dimensional quantum corrections to the magnetoconductance of InSe at low temperatures owing to weak localization

1989 ◽  
Vol 66 (11) ◽  
pp. 5409-5411 ◽  
Author(s):  
D. El‐Khatouri ◽  
A. Khater ◽  
M. Balkanski ◽  
J. Tuchendler
Keyword(s):  
Low Temperatures ◽  
Weak Localization ◽  
Quantum Corrections ◽  
Two Dimensional

scholarly journals Metallic Conduction and Carrier Localization in Two-Dimensional BEDO-TTF Charge-Transfer Solid Crystals

Crystals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 23
Author(s):  
Hiroshi Ito ◽  
Motoki Matsuno ◽  
Seiu Katagiri ◽  
Shinji K. Yoshina ◽  
Taishi Takenobu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Low Temperatures ◽  
Weak Localization ◽  
Metallic State ◽  
Two Dimensional ◽  
Carrier Localization ◽  
Langmuir Blodgett ◽  
Charge Transfer Salts ◽  
Langmuir Blodgett Films ◽  
Magnetic Ions

Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analysis of the weak negative magnetoresistance. The phase coherence lengths deduced with temperature dependence are largely dominated by the electron–electron scattering mechanism. These results indicate that the resistivity upturn at low temperatures is caused by the 2D weak localization. Disorders causing elastic scattering within the metallic domains, such as those of terminal ethylene groups, should be suppressed to prevent the localization.

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

2014 ◽  
Vol 9 (12) ◽  
pp. 1024-1030 ◽  
Author(s):  
Xidong Duan ◽  
Chen Wang ◽  
Jonathan C. Shaw ◽  
Rui Cheng ◽  
Yu Chen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Semiconductor Heterojunctions

Specific heat of ordered and isotopically disordered lattices

1978 ◽  
Vol 56 (10) ◽  
pp. 1390-1394
Author(s):  
K. P. Srivastava
Keyword(s):  
Specific Heat ◽  
Low Temperatures ◽  
Numerical Study ◽  
Three Dimensional ◽  
Constant Volume ◽  
Nearest Neighbour ◽  
Two Dimensional ◽  
Appreciable Difference ◽  
Substantial Change ◽  
Neighbour Interaction

An extensive numerical study on specific heat at constant volume (Cv) for ordered and isotopically disordered lattices has been made. Cv at various temperatures for ordered and disordered linear and two-dimensional lattices have been compared and no appreciable difference in Cv between these two structures has been observed. Effect of concentration of light atoms on Cv for three-dimensional isotopically disordered lattices has also been shown.In spite of taking next-nearest-neighbour interaction into account, no substantial change in Cv between the ordered and isotopically disordered linear lattices has been found. It is shown that the low lying modes contribute substantially at low temperatures.

Magnetic susceptibility ofNdGaO3at low temperatures: A quasi-two-dimensional Ising behavior

1998 ◽  
Vol 58 (2) ◽  
pp. 798-804 ◽  
Author(s):  
F. Luis ◽  
M. D. Kuz’min ◽  
F. Bartolomé ◽  
V. M. Orera ◽  
J. Bartolomé ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Low Temperatures ◽  
Two Dimensional

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

2021 ◽  
Vol 42 (5) ◽  
pp. 052001
Author(s):  
S. Dlimi ◽  
A. El kaaouachi ◽  
L. Limouny ◽  
B. A. Hammou
Keyword(s):  
Low Temperatures ◽  
Two Dimensional

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

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