The effect of aluminum gate thickness on charge trapping in metal‐oxide‐semiconductor devices

M. Berger; E. Avni; J. Shappir

doi:10.1063/1.343797

The effect of aluminum gate thickness on charge trapping in metal‐oxide‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.343797 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4821-4826 ◽

Cited By ~ 2

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Effects of HfOxNyGate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1181 ◽

2004 ◽

Vol 43 (No. 9A/B) ◽

pp. L1181-L1183 ◽

Cited By ~ 1

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Nitrogen Concentration ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1935768 ◽

2005 ◽

Vol 86 (21) ◽

pp. 212902 ◽

Cited By ~ 16

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Conduction

Download Full-text

Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1819994 ◽

2004 ◽

Vol 85 (20) ◽

pp. 4723-4725 ◽

Cited By ~ 7

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Conduction

Download Full-text

Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.99828 ◽

1988 ◽

Vol 53 (9) ◽

pp. 770-772 ◽

Cited By ~ 67

Author(s):

J. R. Schwank ◽

D. M. Fleetwood

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Induced ◽

Induced Charge ◽

Anneal Temperature

Download Full-text

Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

Download Full-text

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

Download Full-text

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

Download Full-text

Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

Download Full-text

Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

Download Full-text

Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Cited By ~ 4

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

Download Full-text