Electron paramagnetic resonance study on thep‐type doping of copper indium disulfide by phosphorus implantation

1989 ◽  
Vol 66 (12) ◽  
pp. 5798-5800 ◽  
Author(s):  
Y. J Hsu ◽  
H. L. Hwang
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Electron Paramagnetic

Studies on Phosphorus-Implantation and the Annealing of Cadmium Telluride and Copper Indium Disulfide

1989 ◽  
Vol 147 ◽  
Author(s):  
Y. J. Hsu ◽  
H. L. Hwang ◽  
H. Y. Ueng
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Beam ◽  
Cadmium Telluride ◽  
Pulse Electron Beam ◽  
Thermal Method ◽  
Pulse Electron ◽  
Paramagnetic Resonance ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Electron Paramagnetic

AbstractThe doping efficiencies obtained in phosphorus-implanted cadmium telluride and copper indium disulfide annealed by pulse electron beam were higher than those annealed by conventional thermal method. To get insights into this phenomenon, electron paramagnetic resonance measurements were performed for both crystals at various stages during the doping process. The results indicated that the pulse electron beam annealing could effectively eliminate the phosphorus interstitials in the implanted crystals but the thermal annealing could not. This shows the significant effect of melting crystals by pulse electron beam annealing to obtain high doping efficiencies.

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