Analysis of the dark current in doped‐well multiple quantum well AlGaAs infrared photodetectors

1989 ◽  
Vol 66 (11) ◽  
pp. 5656-5658 ◽  
Author(s):  
E. Pelvé ◽  
F. Beltram ◽  
C. G. Bethea ◽  
B. F. Levine ◽  
V. O. Shen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Multiple Quantum Well ◽  
Infrared Photodetectors ◽  
Multiple Quantum

Performance Characteristics of N-Type SI-SI/GE Quantum well Infrared Photodetectors

1994 ◽  
Vol 299 ◽  
Author(s):  
V. D. Shadrin ◽  
V. T. Coon ◽  
F. L. Serzhenko
Keyword(s):  
Quantum Well ◽  
Exchange Interaction ◽  
Dark Current ◽  
Multiple Quantum Well ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Ir Detectors ◽  
Quantum Well Infrared Photodetectors ◽  
Well Detector ◽  
Electron Exchange Interaction

AbstractThe theory of multiple quantum well n-type Si-SiGe IR detectors is presented. The coefficient of photoabsorption, quantum efficiency and responsivity of Si-SiGe quantum well detector are calculated taking in consideration the effects of depolarization and electron-electron exchange interaction. We show that the Si-SiGe quantum well detectors possess lower dark current and better performance characteristics compared to GaAs-AlGaAs photodetectors.

Strain-balanced InAsP∕InP∕InGaAs multiple quantum well structures for mid-infrared photodetectors

2002 ◽  
Vol 38 (25) ◽  
pp. 1744
Author(s):  
M. Wada ◽  
S. Araki ◽  
T. Kudou ◽  
T. Umezawa ◽  
S. Nakajima ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Infrared Photodetectors ◽  
Multiple Quantum ◽  
Mid Infrared ◽  
Quantum Well Structures
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