Numerical analysis for high‐efficiency GaAs solar cells fabricated on Si substrates

1989 ◽  
Vol 66 (2) ◽  
pp. 915-919 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Chikara Amano ◽  
Yoshio Itoh
Keyword(s):  
Solar Cells ◽  
Numerical Analysis ◽  
High Efficiency ◽  
Si Substrates

MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cells

1997 ◽  
Vol 170 (1-4) ◽  
pp. 447-450 ◽  
Author(s):  
T. Soga ◽  
T. Kato ◽  
K. Baskar ◽  
C.L. Shao ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
High Quality ◽  
Si Substrates ◽  
Mocvd Growth ◽  
High Efficiency Solar Cells

scholarly journals TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties

2017 ◽  
Vol 124 ◽  
pp. 829-833 ◽  
Author(s):  
Elise Bruhat ◽  
Thibaut Desrues ◽  
Bernadette Grange ◽  
Helène Lignier ◽  
Danièle Blanc-Pélissier ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Si Substrates ◽  
Si Solar Cells

High efficiency GaAs solar cells fabricated on Si substrates

1988 ◽  
Author(s):  
H. Okamoto ◽  
Y. Kadota ◽  
Y. Watanabe ◽  
Y. Fukuda ◽  
T. Oh'hara ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Si Substrates

Analysis for high-efficiency GaAs solar cells on Si substrates

1988 ◽  
Author(s):  
M. Yamaguchi ◽  
C. Amano ◽  
Y. Itoh ◽  
K. Hane ◽  
R.K. Ahrenkiel ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Si Substrates

Numerical analysis of the back interface for high efficiency wide band gap chalcopyrite solar cells

Solar Energy ◽  
2019 ◽  
Vol 180 ◽  
pp. 207-215 ◽  
Author(s):  
Weimin Li ◽  
Wenjie Li ◽  
Ye Feng ◽  
Chunlei Yang
Keyword(s):  
Solar Cells ◽  
Numerical Analysis ◽  
Band Gap ◽  
High Efficiency ◽  
Wide Band ◽  
Wide Band Gap

Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

1989 ◽  
Vol 145 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Susumu Kondo
Keyword(s):  
Solar Cells ◽  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Dislocation Annihilation

AbstractHeteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates

2004 ◽  
Vol 836 ◽  
Author(s):  
Steven A. Ringel ◽  
Carrie L. Andre ◽  
Matthew Lueck ◽  
David Isaacson ◽  
Arthur J. Pitera ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Performance ◽  
High Efficiency ◽  
Defect Density ◽  
Basic Research ◽  
Open Circuit ◽  
Si Substrates ◽  
Lattice Matched ◽  
Open Circuit Voltages

ABSTRACTThe monolithic integration of high efficiency III-V compound solar cell materials and devices with lower-cost, robust and scaleable Si substrates has been a driving force in photovoltaics (PV) basic research for decades. Recent advances in controlling mismatch-induced defects that result from structural and chemical differences between III-V solar cell materials and Si using a combination of SiGe interlayers and monolayer-scale control of III-V/IV interfaces, have led to a series of fundamental advances at the material and device levels, which establish that the great potential of III-V/Si PV is within reach. These include demonstrations of GaAs epitaxial layers on Si that are anti-phase domain-free with verified dislocation densities at or below 1×106 cm−2 and negligible interface diffusion, minority carrier lifetimes for GaAs on Si in excess of 10 ns, single junction GaAs-based solar cells on Si with open circuit voltages (Voc) in excess of 980 mV, efficiencies beyond 18%, and area-independent PV characteristics up to at least 4 cm2. These advances are attributed in large part to the use of a novel “engineered Si substrate” based on compositionally-graded SiGe buffers such that a high-quality, low defect density, relaxed, “virtual” Ge substrate could be developed that can support lattice-matched III-V epitaxy and thus merge III-V technology based on the GaAs (or Ge) lattice constant with Si wafers. This paper focuses on recent results that extend this work to the first demonstration of high performance III-V dual junction solar cells on SiGe/Si. Open circuit voltages in excess of 2 V at one-sun have been obtained for the conventionally “lattice-matched” In0.49Ga0.51P/GaAs dual junction cells on inactive, engineered SiGe/Si; to our knowledge is the first demonstration of > 2V solar power generation on a Si wafer. Comparisons with identical cells on GaAs substrates reveal that the Voc on engineered Si retains more than 94% of its homoepitaxial value, and that at present both DJ/GaAs and DJ/SiGe/Si cells are similarly limited by current mismatch in these early cells, and not fundamental defect factors associated with the engineered Si substrates.

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