High‐speed measurement of the response time of a GaAs/AlxGa1−xAs multiquantum‐well long‐wavelength infrared detector

1989 ◽  
Vol 66 (2) ◽  
pp. 963-965 ◽  
Author(s):  
C. G. Bethea ◽  
B. F. Levine ◽  
G. Hasnain ◽  
J. Walker ◽  
R. J. Malik
Keyword(s):  
Response Time ◽  
High Speed ◽  
Infrared Detector ◽  
Long Wavelength ◽  
Speed Measurement ◽  
Long Wavelength Infrared ◽  
Multiquantum Well

GaAs/GaInP multiquantum well long‐wavelength infrared detector using bound‐to‐continuum state absorption

1990 ◽  
Vol 57 (17) ◽  
pp. 1802-1804 ◽  
Author(s):  
S. D. Gunapala ◽  
B. F. Levine ◽  
R. A. Logan ◽  
T. Tanbun‐Ek ◽  
D. A. Humphrey
Keyword(s):  
Infrared Detector ◽  
Continuum State ◽  
Long Wavelength ◽  
Long Wavelength Infrared ◽  
Multiquantum Well

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Development of long-wavelength infrared detector and its space-based application requirements

2019 ◽  
Vol 28 (2) ◽  
pp. 028504 ◽  
Author(s):  
Junku Liu ◽  
Lin Xiao ◽  
Yang Liu ◽  
Longfei Cao ◽  
Zhengkun Shen
Keyword(s):  
Infrared Detector ◽  
Long Wavelength ◽  
Application Requirements ◽  
Long Wavelength Infrared

scholarly journals Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

2021 ◽  
Author(s):  
Liang Wang ◽  
Liqi Zhu ◽  
Zhicheng Xu ◽  
Fangfang Wang ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Reverse Bias ◽  
Infrared Detector ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Long Wavelength ◽  
Noise Current ◽  
Current Correlation ◽  
Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

scholarly journals Blocked impurity band very long wavelength infrared detector

2021 ◽  
Vol 51 (2) ◽  
pp. 027303
Author(s):  
Ning DAI ◽  
HuiZhen WU ◽  
Yao YAO ◽  
Hao MOU ◽  
HuiYong DENG ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Impurity Band ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector

1996 ◽  
Author(s):  
Ruizhong Wang ◽  
Peiyi Chen ◽  
Peihsin Tsien ◽  
Guangli Luo ◽  
Kangli Zheng ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Si 1-x Ge x /Si heterojunction internal photoemission long-wavelength infrared detector

1994 ◽  
Author(s):  
True L. Lin ◽  
Jin S. Park ◽  
Sarath D. Gunapala ◽  
Eric W. Jones ◽  
Hector M. Del Castillo
Keyword(s):  
Infrared Detector ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared
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