Research on P+-GexSi1-x/p-Si heterojunction internal photoemission long-wavelength infrared detector

1996 ◽  
Author(s):  
Ruizhong Wang ◽  
Peiyi Chen ◽  
Peihsin Tsien ◽  
Guangli Luo ◽  
Kangli Zheng ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Si 1-x Ge x /Si heterojunction internal photoemission long-wavelength infrared detector

1994 ◽  
Author(s):  
True L. Lin ◽  
Jin S. Park ◽  
Sarath D. Gunapala ◽  
Eric W. Jones ◽  
Hector M. Del Castillo
Keyword(s):  
Infrared Detector ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Development of long-wavelength infrared detector and its space-based application requirements

2019 ◽  
Vol 28 (2) ◽  
pp. 028504 ◽  
Author(s):  
Junku Liu ◽  
Lin Xiao ◽  
Yang Liu ◽  
Longfei Cao ◽  
Zhengkun Shen
Keyword(s):  
Infrared Detector ◽  
Long Wavelength ◽  
Application Requirements ◽  
Long Wavelength Infrared

scholarly journals Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

2021 ◽  
Author(s):  
Liang Wang ◽  
Liqi Zhu ◽  
Zhicheng Xu ◽  
Fangfang Wang ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Reverse Bias ◽  
Infrared Detector ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Long Wavelength ◽  
Noise Current ◽  
Current Correlation ◽  
Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

scholarly journals Blocked impurity band very long wavelength infrared detector

2021 ◽  
Vol 51 (2) ◽  
pp. 027303
Author(s):  
Ning DAI ◽  
HuiZhen WU ◽  
Yao YAO ◽  
Hao MOU ◽  
HuiYong DENG ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Impurity Band ◽  
Long Wavelength ◽  
Long Wavelength Infrared

SUPERLATTICE MATERIALS FOR THE NEXT GENERATION OF LONG WAVELENGTH INFRARED DETECTORS

2000 ◽  
Vol 10 (01) ◽  
pp. 47-53
Author(s):  
G. J. BROWN ◽  
F. SZMULOWICZ ◽  
K. MAHALINGAM ◽  
A. SAXLER ◽  
R. LINVILLE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Imaging ◽  
Infrared Detector ◽  
High Sensitivity ◽  
Next Generation ◽  
Ir Detector ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Detector Materials ◽  
Long Wavelength Infrared

New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous space-based infrared imaging applications. To meet these stringent requirements, new materials must be designed and grown using semiconductor heterostructures, such as quantum wells and superlattices, to tailor new optical and electrical properties unavailable in the current generation of materials. One of the most promising materials is a strained layer supperlattice (SLS) composed of thin InAs and GaInSb layers. While this material shows theoretical and early experimental promise, there are still several materials growth and processing issues to be addressed before this material can be transitioned to the next generation of infrared detector arrays. Our research is focused on addressing the basic materials design, growth, optical properties, and electronic transport issue of these superlattices.

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
Clayton L. Workman ◽  
Zhiming Wang ◽  
Wenquan Ma ◽  
Christi E. George ◽  
R. Panneer Selvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Detector ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum ◽  
Material System ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Long Wavelength Infrared

ABSTRACTWe report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

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