In situ real-time spectroscopic ellipsometry measurement for the investigation of molecular orientation in organic amorphous multilayer structures

2010 ◽  
Vol 107 (12) ◽  
pp. 123512 ◽  
Author(s):  
Daisuke Yokoyama ◽  
Chihaya Adachi
1998 ◽  
Vol 313-314 ◽  
pp. 579-582 ◽  
Author(s):  
R.T. Carline ◽  
J. Russell ◽  
T.J.C. Hosea ◽  
P.J.S. Thomas ◽  
C. Pickering

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.


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