Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

2010 ◽  
Vol 96 (21) ◽  
pp. 212901 ◽  
Author(s):  
C. Marchiori ◽  
E. Kiewra ◽  
J. Fompeyrine ◽  
C. Gerl ◽  
C. Rossel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Stacks ◽  
Structural And Electrical Properties

Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

2019 ◽  
Vol 30 (48) ◽  
pp. 485201
Author(s):  
Heyi Li ◽  
Chaoming Liu ◽  
Yanqing Zhang ◽  
Chunhua Qi ◽  
Yidan Wei ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Radiation Effects ◽  
Field Effect Transistors ◽  
Electron Radiation ◽  
Structural And Electrical Properties

Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide

2002 ◽  
Vol 742 ◽  
Author(s):  
S.-M. Koo ◽  
S. I. Khartsev ◽  
C.-M. Zetterling ◽  
A. M. Grishin ◽  
M. Östling
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hysteresis Loops ◽  
Gate Stacks ◽  
Metal Insulator ◽  
Pzt Thin Films ◽  
Capacitance Voltage ◽  
Different Types

ABSTRACTWe report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr =14.2μC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan d ∼ 0.0007 at 12 V, 400kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∼ 9eV) barrier buffer layer between PZT (Eg ∼ 3.5eV) and SiC (Eg ∼ 3.2eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.

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