Hydrogenation kinetics and defect termination of post‐plasma‐treated chemical‐vapor‐deposited amorphous silicon film

1989 ◽  
Vol 65 (8) ◽  
pp. 3061-3068 ◽  
Author(s):  
Minoru Nakamura ◽  
Toshiyuki Ohno ◽  
Kenji Miyata ◽  
Nobutake Konishi ◽  
Takaya Suzuki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Amorphous Silicon Film ◽  
Chemical Vapor Deposited ◽  
Hydrogenation Kinetics

Influence of the Electrode Spacing on the Plasma Characteristics and Hydrogenated Amorphous Silicon Film Properties Grown in the DC Saddle Field PECVD System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Keith R. Leong ◽  
Nazir P. Kherani ◽  
Stefan Zukotynski
Keyword(s):  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
High Energy ◽  
Electrode Spacing ◽  
Film Properties ◽  
Amorphous Silicon Film ◽  
Dc Saddle Field ◽  
Ion Species

ABSTRACTA new plasma deposition system was built with the capability of varying the electrode spacing in the DC Saddle Field plasma enhanced chemical vapor deposition system. An ion mass spectrometer was installed just below the substrate holder to sample the ion species travelling towards the substrate. Silane plasma and amorphous silicon film studies were conducted to shed light on the impinging ion species, ion energy distributions, and film properties with varying electrode spacing. The results indicate that decreasing the distance between the substrate and cathode leads to a reduction in the high energy ion bombardment.

Control of Amorphous Silicon Crystallization Using Germanium Deposited by Low Pressure Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
Masato Toita ◽  
Pranav Kalavade ◽  
Krishna C. Saraswat
Keyword(s):  
Activation Energy ◽  
Amorphous Silicon ◽  
Incubation Time ◽  
Vapor Deposition ◽  
Crystallization Behavior ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Amorphous Silicon Film ◽  
Pressure Chemical ◽  
Si Films

ABSTRACTCrystallization behavior of 100nm amorphous silicon film with and without a 160nm poly-Ge layer on top was investigated. Ge was observed to increase the nucleation rate as well as to increase the incubation time for nucleation in a-Si. Activation energy for nucleation was 2.3eV for Ge-covered Si films as compared to 2.7eV for the control a-Si films with no poly-Ge. Activation energy for incubation is almost unchanged for both the films (-3.3eV). An alternative seeding technique for a-Si films using the increase in the incubation time for nucleation due to presence of poly-Ge is proposed.

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

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