A derivative method for interface state density determination at the silicon‐silicon dioxide interface

1988 ◽  
Vol 64 (11) ◽  
pp. 6581-6583 ◽  
Author(s):  
S. C. Vitkavage ◽  
E. A. Irene
Keyword(s):  
Silicon Dioxide ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Density Determination ◽  
Derivative Method ◽  
Silicon Silicon ◽  
Silicon Silicon Dioxide Interface

Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

2017 ◽  
Vol 897 ◽  
pp. 340-343 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Yoshihito Katsu ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Silicon Dioxide ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Surface Roughening ◽  
Oxide Surface ◽  
Capping Layer ◽  
Enhanced Oxidation

Surface morphology and electrical properties of silicon dioxide (SiO2) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO2 capping prior to MEO. The Ba atoms at the SiO2/SiC interface were found to diffuse to the oxide surface through the deposited SiO2 capping layer, and then the Ba density reduced to ~1014 cm-2 before stable MEO. The resulting SiO2/SiC interface showed the reduced interface state density but the insulating property of the oxides was significantly degraded.

Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

2006 ◽  
Vol 527-529 ◽  
pp. 979-982 ◽  
Author(s):  
Antonella Poggi ◽  
Francesco Moscatelli ◽  
Andrea Scorzoni ◽  
Giovanni Marino ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Dioxide ◽  
Conduction Band ◽  
Interface State ◽  
Growth Conditions ◽  
State Density ◽  
Interface State Density ◽  
Conduction Band Edge ◽  
Wet Oxidation ◽  
Better Than

Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N2 is proposed. The interface state density Dit near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported.

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type
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