DX‐center‐like traps and persistent photoconductivity in Te‐doped AlxGa1−xSb on GaSb

1988 ◽  
Vol 64 (4) ◽  
pp. 1897-1901 ◽  
Author(s):  
Yu Zhu ◽  
Yoshikazu Takeda ◽  
Akio Sasaki
Keyword(s):  
Persistent Photoconductivity ◽  
Dx Center

Evidence for negatively charged DX-center in Si-doped AlGaAs from persistent photoconductivity measurements

1991 ◽  
Vol 77 (5) ◽  
pp. 327-330 ◽  
Author(s):  
I.F.L. Dias ◽  
A.G. de Oliveira ◽  
J.C. Bezerra ◽  
R.C. Miranda ◽  
P.S.S. Guimarães ◽  
...  
Keyword(s):  
Persistent Photoconductivity ◽  
Si Doped ◽  
Dx Center

scholarly journals A Photocapture Test of DX-Center Models

1989 ◽  
Vol 163 ◽  
Author(s):  
Harold P. Hjalmarson ◽  
S. R. Kurtz ◽  
T. M. Brennan
Keyword(s):  
Conduction Band ◽  
Cross Section ◽  
Threshold Energy ◽  
Photoionization Cross Section ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Null Result ◽  
Dx Center

AbstractThe DX-center model is widely used to explain data for the persistent photoconductivity (PPC) effect. An analysis of the DX-center model suggests a new experiment to test its correctness. In this experiment, photons near the threshold energy of the photoionization cross-section for the DX-center induce transitions from the partially occupied conduction band to empty DX-centers. This mechanism, which we call photocapture, competes with the usual photoionization which empties the DX-centers. The photocapture cross-section is estimated and an experimental attempt is made to detect photocapture. The significance of the null result is discussed.

scholarly journals Chemical trends of deep levels in van der Waals semiconductors

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Penghong Ci ◽  
Xuezeng Tian ◽  
Jun Kang ◽  
Anthony Salazar ◽  
Kazutaka Eriguchi ◽  
...  
Keyword(s):  
Deep Level ◽  
Energy Levels ◽  
Van Der Waals ◽  
Deep Levels ◽  
Persistent Photoconductivity ◽  
Sulfur Vacancy ◽  
Native Defects ◽  
Crystal Imperfections ◽  
Dx Center ◽  
Chemical Trends

AbstractProperties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K.

Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods

2016 ◽  
Vol 3 (4) ◽  
pp. 045011 ◽  
Author(s):  
Yong Xie ◽  
Manfred Madel ◽  
Martin Feneberg ◽  
Benjamin Neuschl ◽  
Wanqi Jie ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Zno Nanorods ◽  
Persistent Photoconductivity ◽  
High Quality ◽  
Dx Center

DX Center Energy Level in InxAl1−xAs Compounds

1999 ◽  
Vol 573 ◽  
Author(s):  
Hüseyin Sari ◽  
Harry H. wieder
Keyword(s):  
Energy Level ◽  
Conduction Band ◽  
Canonical Ensemble ◽  
Grand Canonical Ensemble ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Indium Concentration ◽  
Self Consistent ◽  
Dx Center ◽  
Grand Canonical

ABSTRACTThe presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
John W. Farmer ◽  
Harold P. Hjalmarson ◽  
G. A. Samara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Complex ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure

1985 ◽  
Author(s):  
M. Tachikawa ◽  
T. Fujisawa ◽  
H. Kukimoto A. Shibata ◽  
G. Oomi ◽  
S. Minomura
Keyword(s):  
Hydrostatic Pressure ◽  
Persistent Photoconductivity ◽  
Dx Center

scholarly journals Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity

2017 ◽  
Vol 110 (7) ◽  
pp. 072101 ◽  
Author(s):  
Rocco Meli ◽  
Giacomo Miceli ◽  
Alfredo Pasquarello
Keyword(s):  
Nonradiative Recombination ◽  
Persistent Photoconductivity ◽  
Dx Center

Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure

1985 ◽  
Vol 24 (Part 2, No. 11) ◽  
pp. L893-L894 ◽  
Author(s):  
Masami Tachikawa ◽  
Toshimasa Fujisawa ◽  
Hiroshi Kukimoto ◽  
Akio Shibata ◽  
Gendo Oomi ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Persistent Photoconductivity ◽  
Dx Center

New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAs

1999 ◽  
Vol 273-274 ◽  
pp. 792-795 ◽  
Author(s):  
R Piotrzkowski ◽  
E Litwin-Staszewska ◽  
F Bosc ◽  
J Sicart ◽  
J.L Robert
Keyword(s):  
Persistent Photoconductivity ◽  
New Type ◽  
Si Doped ◽  
Dx Center
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