Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films

1988 ◽  
Vol 64 (5) ◽  
pp. 2375-2379 ◽  
Author(s):  
T. C. Chou ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Antiphase Domains

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

Effects of barrier layer and annealing on abnormal grain growth in copper thin films

1994 ◽  
Vol 76 (8) ◽  
pp. 4516-4523 ◽  
Author(s):  
E. M. Zielinski ◽  
R. P. Vinci ◽  
J. C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Barrier Layer ◽  
Abnormal Grain Growth

scholarly journals Electrical Transport and Grain Growth in Solution-Cast, Chloride-Terminated Cadmium Selenide Nanocrystal Thin Films

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 7513-7521 ◽  
Author(s):  
Zachariah M. Norman ◽  
Nicholas C. Anderson ◽  
Jonathan S. Owen
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Grain Growth ◽  
Electrical Transport ◽  
Solution Cast

Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

2009 ◽  
Vol 482 (1-2) ◽  
pp. 253-255 ◽  
Author(s):  
N.K. Karan ◽  
R. Thomas ◽  
S.P. Pavunny ◽  
J.J. Saavedra-Arias ◽  
N.M. Murari ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Fatigue Endurance

Mechanisms of Grain Growth in Free-Standing Nanograined Gold Thin Films

2005 ◽  
Vol 907 ◽  
Author(s):  
J. A. Gregg ◽  
K Hattar ◽  
C H Lei ◽  
I M Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Structural Changes ◽  
Dislocation Slip ◽  
Free Standing ◽  
Transmission Electron ◽  
Enhanced Properties ◽  
Gold Thin Films ◽  
Annealing Experiments

AbstractRetention of the enhanced properties reported for nanograined metallic systems requires that the nanostructure be insensitive to temperature and deformation. In situ transmission electron microscopy annealing experiments were employed to investigate the structural changes associated with the formation of micron-sized grains in nanograined evaporated gold thin films. This abnormal grain growth occurs randomly throughout the film. Twinning but not dislocation slip occurs in the growing grains until the grain size is in the hundreds of nanometer range. The twins appear to hinder growth and for grain growth to continue the twins must either be annihilated or be able to grow with the grain concurrently.

Grain Growth and Reaction in Nickel-Silicon Thin-Films

1991 ◽  
Vol 95 (11) ◽  
pp. 1410-1413 ◽  
Author(s):  
P. Knauth ◽  
A. Charaï ◽  
C. Bergman ◽  
P. Gas
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Silicon Thin Films ◽  
Nickel Silicon
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