Effects of barrier layer and annealing on abnormal grain growth in copper thin films

1994 ◽  
Vol 76 (8) ◽  
pp. 4516-4523 ◽  
Author(s):  
E. M. Zielinski ◽  
R. P. Vinci ◽  
J. C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Barrier Layer ◽  
Abnormal Grain Growth

Crystallographic texture change during abnormal grain growth in Cu‐Co thin films

1994 ◽  
Vol 65 (2) ◽  
pp. 177-179 ◽  
Author(s):  
J. M. E. Harper ◽  
J. Gupta ◽  
D. A. Smith ◽  
J. W. Chang ◽  
K. L. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Crystallographic Texture ◽  
Abnormal Grain Growth ◽  
Texture Change

Hrtem Observations of Sol-Gel Derived Yag and Alumina/Yag Thin Films

1990 ◽  
Vol 183 ◽  
Author(s):  
R. S. Hay
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Orientation Relationship ◽  
Grain Growth ◽  
Yttrium Aluminum Garnet ◽  
Sol Gel ◽  
Abnormal Grain Growth ◽  
Structure Evolution ◽  
Specimen Preparation ◽  
Ion Milling

AbstractThin films of YAG and YAG/alumina mixtures were prepared by gelling a sol across a TEM grid. The grids were heat-treated to temperatures as high as 1550°C. The resulting ceramic thin films were observed by standard and high resolution TEM techniques. Ion-milling, carbon coating, or other specimen preparation was not necessary. The phase and microstructure evolution, as well as pore structure evolution and spheroidization of film edges could be easily observed. Abnormal grain growth was observed in yttrium-aluminum garnet (YAG) films. Lattice images were taken of the matrix, abnormal grains, and structures that evolved from the abnormal rains at higher temperatures. The grain size preceding abnormal grain growth was 20–50 nm. The abnormal grains were composed of 20–50 nm subgrains with up to several degrees of misorientation. High resolution observations were also made of small (< 0.2 μm) YAG inclusions in alumina. An orientation relationship of (111)[011]alumina//(112)[021]YAGwas observed. This orientation relationship was not observed in large inclusions.

Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by R.F. Magnetron sputtering

1998 ◽  
Vol 21 (1-4) ◽  
pp. 419-428 ◽  
Author(s):  
Choelhwyi Bae ◽  
Jeon-Kook Lee ◽  
Si-Hyung Lee ◽  
Yoon Baek Park ◽  
Hyung-Jin Jung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Ferroelectric Properties ◽  
Abnormal Grain Growth

scholarly journals The Effect of Strain Distribution on Abnormal Grain Growth in Cu Thin Films

2004 ◽  
Vol 45 (10) ◽  
pp. 3033-3038 ◽  
Author(s):  
Miki Moriyama ◽  
Kentaro Matsunaga ◽  
Toshifumi Morita ◽  
Susumu Tsukimoto ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Strain Distribution ◽  
Abnormal Grain Growth

Annealing Textures of Thin Films and Copper Interconnects

2005 ◽  
Vol 475-479 ◽  
pp. 1-8 ◽  
Author(s):  
Dong Nyung Lee
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Fiber Type ◽  
Boundary Energy ◽  
Boundary Surface ◽  
Strain Energy Release ◽  
Abnormal Grain Growth ◽  
Copper Interconnects ◽  
Geometric Constraints

Vapor-, electro-, and electroless-deposits have usually strong fiber textures. When annealed, the deposits undergo recrystallization or abnormal grain growth to reduce their energy stored during deposition. The driving force for recrystallization is mainly caused by dislocations, whereas that for abnormal grain growth is due to the grain boundary, surface, interface, and strain energies. During recrystallization and abnormal grain growth, the texture change can take place. The recrystallization and abnormal grain growth textures are in general of fiber type. However, copper interconnects are subjected to non-planar stress state due to geometric constraints during room temperature and/or elevated temperature annealing. The annealing textures of the thin films and copper interconnects are discussed in terms of the minimization of the surface, interface, and strain energies, the grain boundary energy and mobility, and the strain-energy-release maximization.

Abnormal grain growth of sputtered CuNi(Mn) thin films

2000 ◽  
Vol 15 (5) ◽  
pp. 1062-1068 ◽  
Author(s):  
W. Brückner ◽  
V. Weihnacht ◽  
W. Pitschke ◽  
J. Thomas ◽  
S. Baunack
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Temperature Cycle ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Maximum Temperatures ◽  
Film Substrate ◽  
20 Nm

The evolution in both stress and microstructure was investigated on sputtered Cu0.57Ni0.42Mn0.01thin films of 400 nm thickness during the first temperature cycle up to 550 °C. Samples from stress–temperature measurements up to various maximum temperatures were analyzed by x-ray diffraction, scanning and transmission electron microscopy, and Auger electron spectroscopy. The columnar grains with lateral diameters of about 20 nm in the as-deposited state coarsen to about 400 nm above 300 °C. Probably due to the impurity (Mn) drag effect, the coarsening occurs by abnormal grain growth rather than by normal grain growth, starting near the film–substrate interface. The stress development results from a combination of densification due to grain growth and plastic stress relaxation.

Abnormal grain growth in aluminum alloy thin films

1991 ◽  
Vol 69 (7) ◽  
pp. 3929-3940 ◽  
Author(s):  
Hai P. Longworth ◽  
C. V. Thompson
Keyword(s):  
Thin Films ◽  
Aluminum Alloy ◽  
Grain Growth ◽  
Abnormal Grain Growth

The effect of strain on abnormal grain growth in Cu thin films

2003 ◽  
Vol 32 (4) ◽  
pp. 261-267 ◽  
Author(s):  
M. Moriyama ◽  
K. Matsunaga ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Abnormal Grain Growth

scholarly journals Theory of abnormal grain growth in thin films and analysis of energy anisotropy

2003 ◽  
Vol 52 (5) ◽  
pp. 1207
Author(s):  
Zhang Jian-Min ◽  
Xu Ke-Wei ◽  
Zhang Mei-Rong
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Energy Anisotropy
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