The effects of a high‐temperature anneal on the electrical and optical properties of bulk CdTe:In

1988 ◽  
Vol 64 (5) ◽  
pp. 2656-2665 ◽  
Author(s):  
N. C. Giles ◽  
S. Hwang ◽  
J. F. Schetzina ◽  
S. McDevitt ◽  
C. J. Johnson
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electrical And Optical Properties ◽  
High Temperature Anneal

Ternary Bismuth Chalcogenides for Thermoelectric Applications. Synthesis and Charge Transport Properties of New Compounds in the K-BI-S System.

1995 ◽  
Vol 410 ◽  
Author(s):  
Mercouri G. Kanatzidis ◽  
Timothy J. McCarthy ◽  
Troy A. Tanzer ◽  
Li-H. Chen ◽  
Tim Hogan ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Charge Transport ◽  
Three Dimensional ◽  
Bismuth Atom ◽  
Electrical And Optical Properties ◽  
Bismuth Chalcogenides ◽  
Dimensional Network ◽  
Ternary Sulfide ◽  
New Compounds

ABSTRACTKBi6.33S10 and K2Bi8S13 were synthesized by the direct combination of K2S/Bi2S3 at high temperature (>700°C). The reaction of K2S/3.3Bi2S3 at 800°C revealed the presence of a new ternary sulfide KBi6.33S10 (I) (92% yield). The structure consists of blocks of Bi2Te3 and Cdl2-type units that are connected to form a three-dimensional network with K+ ions located in the channels that run along the b-axis. The same reaction but with a different ratio, at 750°C, gave the new ternary sulfide K2Bi8S13 (II) (94% yield). The structure of the shiny rod-like crystals is closely related to that of I. As in I, it also consists of Bi2Te3 and Cdl2-type fragments that connect to form K+-filled channels. The two potassium atoms and one bismuth atom are disordered over three sites. Some preliminary electrical and optical properties of these materials are discussed.

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

2017 ◽  
Vol 70 ◽  
pp. 139-144 ◽  
Author(s):  
Noriyuki Taoka ◽  
Giovanni Capellini ◽  
Viktoria Schlykow ◽  
Michele Montanari ◽  
Peter Zaumseil ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electrical And Optical Properties

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

2017 ◽  
Vol 57 ◽  
pp. 48-53 ◽  
Author(s):  
Noriyuki Taoka ◽  
Giovanni Capellini ◽  
Viktoria Schlykow ◽  
Michele Montanari ◽  
Peter Zaumseil ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electrical And Optical Properties

Formation of Vanadium Oxide (V-O System) Graded Compounds under Strong Gravitational Field

2015 ◽  
Vol 363 ◽  
pp. 164-170 ◽  
Author(s):  
Jahirul Islam Khandaker ◽  
Makoto Tokuda ◽  
Yudai Ogata ◽  
Tadao Nishiyama ◽  
Tsutomo Mashimo
Keyword(s):  
Optical Properties ◽  
Gravitational Field ◽  
High Temperature ◽  
Vanadium Oxide ◽  
Condensed Matter ◽  
Structure Change ◽  
Scattering Method ◽  
Composition Change ◽  
Electrical And Optical Properties ◽  
Strong Gravitational Field

Strong gravitational field induces sedimentation of atoms due to the different body forces acting on respective atoms, and gives a tool for controlling elemental compositions in condensed matter. Vanadium oxide (V-O system) has large contrast in phases like VO, V2O3, VO2, V2O5 etc., and shows the respective interesting diverse electrical and optical properties. We performed a strong-gravity experiment (0.397106G at 400°C for 24 hours) on a V2O5 polycrystal using the high temperature ultracentrifuge to examine the composition change and further the structure change. It was found by the XRD and Raman scattering method that VO2 and V2O3 phases appeared and the amounts were increased, while one of the V2O5 phase decreased gradually along with the increasing gravitational field.

Preparation of ATO Thin Films from SPS-Derived Large Size ATO Ceramic Targets by PVD Methods

2014 ◽  
Vol 783-786 ◽  
pp. 1973-1978
Author(s):  
Fei Chen ◽  
Jun Yan Wu ◽  
Qiang Shen ◽  
Julie M. Schoenung ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
High Temperature ◽  
Energy Density ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Electrical And Optical Properties ◽  
Large Size ◽  
Ceramic Targets

Good crystalline of ATO thin films is necessary to improve the electrical and optical properties. In this paper, ATO thin films were fabricated using PLD method at high temperature of 550 °C, and the effect of laser energy density on the microstructure, electrical property and optical property of the ATO films is discussed. The results suggest that ATO films show good crystalline when deposited at high temperature of 550 °C. Both the electrical and optical properties have been enhanced with the increasing of laser energy density. When the laser energy density is 5.4 J/cm2, the lowest resistivity of ATO thin film is obtained with the value of 6.52×10-4 Ω·cm and the average optical transmittances is 82.0 %.

scholarly journals Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs

1998 ◽  
Vol 83 (1) ◽  
pp. 260-265 ◽  
Author(s):  
Z.-Q. Fang ◽  
D. C. Reynolds ◽  
D. C. Look ◽  
N. G. Paraskevopoulos ◽  
T. E. Anderson ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Electrical And Optical Properties
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