Some remarks on excitation spectra versus photoluminescence spectra for the evaluation of quantum wells

1988 ◽  
Vol 64 (7) ◽  
pp. 3647-3649 ◽  
Author(s):  
Robert C. Miller ◽  
Rajaram Bhat
2008 ◽  
Vol 5 (6) ◽  
pp. 2270-2273
Author(s):  
P. Dawson ◽  
N. P. Hylton ◽  
M. J. Kappers ◽  
C. McAleese ◽  
C. J. Humphreys

2011 ◽  
Vol 34 (7) ◽  
pp. 1645-1648
Author(s):  
K. Gopalakrishna Naik ◽  
K. S. R. K. Rao ◽  
T. Srinivasan ◽  
R. Muralidharan

2006 ◽  
Vol 89 (1) ◽  
pp. 011104 ◽  
Author(s):  
Q. Li ◽  
S. J. Xu ◽  
G. Q. Li ◽  
D. C. Dai ◽  
C. M. Che

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.


2019 ◽  
Vol 64 (3) ◽  
pp. 325-329
Author(s):  
M. R. Yuskaev ◽  
D. A. Pashkeev ◽  
V. E. Goncharov ◽  
A. V. Nikonov ◽  
A. V. Egorov

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