Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells

2008 ◽  
Vol 5 (6) ◽  
pp. 2270-2273
Author(s):  
P. Dawson ◽  
N. P. Hylton ◽  
M. J. Kappers ◽  
C. McAleese ◽  
C. J. Humphreys
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Spectra

scholarly journals Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells

2011 ◽  
Vol 34 (7) ◽  
pp. 1645-1648
Author(s):  
K. Gopalakrishna Naik ◽  
K. S. R. K. Rao ◽  
T. Srinivasan ◽  
R. Muralidharan
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Spectra ◽  
Edge Singularity ◽  
Fermi Edge ◽  
Fermi Edge Singularity

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Analysis of the Photoluminescence Spectra of Heterostructures with AlGaAs/GaAs Quantum Wells

2019 ◽  
Vol 64 (3) ◽  
pp. 325-329
Author(s):  
M. R. Yuskaev ◽  
D. A. Pashkeev ◽  
V. E. Goncharov ◽  
A. V. Nikonov ◽  
A. V. Egorov
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Spectra

Photoluminescence spectra of HgCdTe structures with single quantum wells

2016 ◽  
Vol 83 (4) ◽  
pp. 206 ◽  
Author(s):  
A. V. Voĭtsekhovskiĭ ◽  
D. I. Gorn ◽  
I. I. Izhnin ◽  
A. I. Izhnin
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Spectra ◽  
Single Quantum

scholarly journals Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
J. Dalfors ◽  
J. P. Bergman ◽  
P.O. Holtz ◽  
B. Monemar ◽  
H. Amano ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Gas ◽  
Energy Transition ◽  
Photoluminescence Spectra ◽  
Photoluminescence Decay ◽  
Fermi Edge ◽  
Decay Times ◽  
Piezoelectric Field ◽  
Good Agreement

Photoluminescence spectra were measured for 100 Å wurtzite GaN AlGaN modulation doped quantum wells. Three well-resolved peaks originate from the quantum well. The theoretically calculated confinement energies have been compared to the experimental energy positions and found to be in good agreement with the data, assuming that the piezoelectric field is largely screened by the electron gas. The highest energy transition may originate from the Fermi edge, consistent with the temperature dependence of the photoluminescence. Decay times for the different transitions indicate that the photoexcited holes are localized.

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