Unstable valence rare earths ion implanted into transition metals: Valence variation studies

1988 ◽  
Vol 63 (8) ◽  
pp. 3692-3694 ◽  
Author(s):  
F. Lu ◽  
S. Gunapala ◽  
M. Croft ◽  
N. G. Stoffel ◽  
M. L. den Boer
Keyword(s):  
Transition Metals ◽  
Rare Earths ◽  
Ion Implanted

Gettering Behavior of Transition Metals in Low Energy, High Dose Ion Implanted Silicon

2012 ◽  
Vol 187 ◽  
pp. 283-286 ◽  
Author(s):  
Koichiro Saga
Keyword(s):  
Transition Metals ◽  
High Energy ◽  
Low Energy ◽  
Silicon Surfaces ◽  
High Dose ◽  
Metal Impurities ◽  
Surface Metal ◽  
Recombination Centers ◽  
Detrimental Impact ◽  
Ion Implanted

Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity, while metal impurities dissolved in silicon provide recombination centers, resulting in junction leakage. Surface metal impurities penetrate silicon by the collision with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. If metal impurities are present around junctions, they can cause junction leakage. In order to avoid the junction leakage, metal impurities must be away from junction. It was reported that iron can be gettered in the region of dopants implanted at high energy [. On the other hand, little work has been reported on the behavior of metal impurities in shallow junction. In this study, the gettering behavior of various transition metals in low-energy and high-dose ion-implanted silicon has been demonstrated.

Optical Activation of Ion Implanted Rare-Earths

1993 ◽  
Vol 301 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
M. Gauneau
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earth Elements ◽  
Rare Earths ◽  
Annealing Temperature ◽  
Implantation Energy ◽  
Optical Activation ◽  
Energy Dose ◽  
The Rare Earth ◽  
Ion Implanted

ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

From the transition metals to the rare earths — via the actinides

1995 ◽  
Vol 223 (2) ◽  
pp. 204-210 ◽  
Author(s):  
M.S.S. Brooks ◽  
O. Eriksson ◽  
B. Johansson
Keyword(s):  
Transition Metals ◽  
Rare Earths
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