Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures

1988 ◽  
Vol 63 (1) ◽  
pp. 190-194 ◽  
Author(s):  
K. Kash ◽  
B. Tell ◽  
P. Grabbe ◽  
E. A. Dobisz ◽  
H. G. Craighead ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Quantum Well Structures ◽  
Aluminum Ion

Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing

2006 ◽  
Vol 21 (3) ◽  
pp. L25-L28 ◽  
Author(s):  
V A Coleman ◽  
M Buda ◽  
H H Tan ◽  
C Jagadish ◽  
M R Phillips ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Mass and dose dependence of ion‐implantation‐induced intermixing of GaAs/GaAlAs quantum‐well structures

1990 ◽  
Vol 67 (4) ◽  
pp. 1805-1813 ◽  
Author(s):  
H. Leier ◽  
A. Forchel ◽  
G. Hörcher ◽  
J. Hommel ◽  
S. Bayer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Dose Dependence ◽  
Quantum Well Structures

Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication

1988 ◽  
Vol 144 ◽  
Author(s):  
J. P. Donnelly ◽  
K. K. Anderson ◽  
J. D. Woodhouse ◽  
W. D. Goodhue ◽  
D. Yap ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Compound Semiconductor ◽  
Ion Beams ◽  
Device Fabrication ◽  
Multiple Quantum ◽  
Quantum Well Structures

ABSTRACTIon-beam-assisted etching of GaAs/AlGaAs and InP/GaInAsP, ion-beam disordering of GaAs/AlGaAs multiple-quantum-well structures, and ion implantation in InP are discussed.

scholarly journals Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation

1988 ◽  
Vol 144 ◽  
Author(s):  
Fulin Xiong ◽  
T. A. Tombrello ◽  
H. Wang ◽  
T. R. Chen ◽  
H. Z. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
High Performance ◽  
Deep Level ◽  
Threshold Current ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Electrical Isolation ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

ABSTRACTMeV oxygen ion implantation in GaAs/AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A l0μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AIGaAs.

Bandgap tuning of semiconductor quantum well structures using ion implantation

1994 ◽  
Vol 15 (4) ◽  
pp. 385-389 ◽  
Author(s):  
P.G. Piva ◽  
P.J. Poole ◽  
S. Charbonneau ◽  
E.S. Koteles ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Quantum Well Structures ◽  
Semiconductor Quantum Well ◽  
Bandgap Tuning

scholarly journals Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation

1994 ◽  
Author(s):  
Sergio Pellegrino ◽  
C. Pignataro ◽  
Manuela Caldironi ◽  
M. Dellagiovanna ◽  
F. Vidimari ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Rare Gas ◽  
Quantum Well Structures ◽  
Strained Quantum Well
Sign in / Sign up

Export Citation Format

Share Document