scholarly journals Temperature dependent properties of InSb and InAs nanowire field-effect transistors

2010 ◽  
Vol 96 (15) ◽  
pp. 153505 ◽  
Author(s):  
Henrik A. Nilsson ◽  
Philippe Caroff ◽  
Claes Thelander ◽  
Erik Lind ◽  
Olov Karlström ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Dependent ◽  
Temperature Dependent Properties

scholarly journals Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 75
Author(s):  
Maksim A. Pavlenko ◽  
Yuri A. Tikhonov ◽  
Anna G. Razumnaya ◽  
Valerii M. Vinokur ◽  
Igor A. Lukyanchuk
Keyword(s):  
Phase Diagram ◽  
Dielectric Properties ◽  
Temperature Dependence ◽  
Energy Efficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Temperature Dependent ◽  
Domain Structures ◽  
Temperature Dependent Properties

It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO3/PbTiO3/SrTiO3 heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

2020 ◽  
Vol 1004 ◽  
pp. 620-626
Author(s):  
Hironori Takeda ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Free Carrier ◽  
Oxide Semiconductor ◽  
Thermal Excitation ◽  
Temperature Dependent ◽  
Conduction Mechanisms ◽  
The Impact

Temperature-dependent Hall effect measurements were conducted to investigate the channel conduction mechanisms of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). This method allows us to discriminate the impact of the density of mobile (free) carriers in the inversion channels and their net mobility on the performance of SiC MOSFETs. It was found that, while the free carrier ratio of SiC MOSFETs with conventional gate oxides formed by dry oxidation is below 4% at 300 K, increasing the free carrier ratio due to thermal excitation of trapped electrons from SiO2/SiC interfaces leads to an unusual improvement in the field-effect mobility of SiC MOSFETs at elevated temperatures. Specifically, a significant increase in free carrier density surpasses the mobility degradation caused by phonon scattering for thermally grown SiO2/SiC interfaces. It was also found that, although nitrogen incorporation in SiO2/SiC interfaces increases the free carrier ratio typically up to around 30%, introduction of an additional scattering factor associated with interface nitridation compensates for the moderate amount of thermally generated mobile carriers at high temperatures, indicating a fundamental drawback of nitridation of SiO2/SiC interfaces. On the basis of these findings, we discuss the channel conduction mechanisms of SiC MOSFETs.

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

2008 ◽  
Vol 92 (15) ◽  
pp. 152113 ◽  
Author(s):  
P. Kordoš ◽  
D. Donoval ◽  
M. Florovič ◽  
J. Kováč ◽  
D. Gregušová
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Dependent

Organic Materials for Active Layers in Transistors: Study of the Electrical Stability Properties

2006 ◽  
Vol 514-516 ◽  
pp. 33-37
Author(s):  
Henrique Leonel Gomes ◽  
Peter Stallinga ◽  
D.M. de Leeuw
Keyword(s):  
Field Effect ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Trap States ◽  
Electrical Stability ◽  
Temperature Dependent ◽  
Electrical Instability ◽  
Active Layers ◽  
Trapping Process ◽  
Trapping Sites

Field effect transistors based on several conjugated organic materials were fabricated and assesed in terms of electrical stability. The device characteristics were studied using steady state measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence for an electrical instability occurring above 200 K that is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.

Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

Carbon ◽  
2015 ◽  
Vol 93 ◽  
pp. 384-392 ◽  
Author(s):  
Xiao-Wen Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Cheng Zhang ◽  
Yi-Lin Sun ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Transport Properties ◽  
Temperature Dependent

Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
Byung-Seong Bae ◽  
Deok-Ho Cho ◽  
Jae-Hee Lee ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Field Effect Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Very Low Temperature

ABSTRACTWe investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) at temperatures down to 20 K. With decreasing temperature, the threshold voltage increased, the field effect mobility and the on-current decreased. The measured on-currents versus inverse temperature above 80 K are represented as the sum of two exponentially varied currents. It is concluded that on-current is nearest-neighbour hopping between 120 K and 80 K. Below this temperature, the temperature dependence of on-current is explained by variable range hopping and below about 30 K on-current becomes nearly independent of temperature. At very low temperature hopping probability may be governed not by temperature but by temperature independent tunneling, depending on the overlap of the wave function. The explanation of threshold voltage increase at low temperature is given.

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