Large grain size CdTe films grown on glass substrates

1988 ◽  
Vol 63 (2) ◽  
pp. 410-413 ◽  
Author(s):  
O. Zelaya ◽  
F. Sánchez‐Sinencio ◽  
J. G. Mendoza‐Alvarez ◽  
M. H. Farías ◽  
L. Cota‐Araiza ◽  
...  
Keyword(s):  
Grain Size ◽  
Glass Substrates ◽  
Cdte Films

The Effect of Source Microstructure on the Close-Space Sublimation of CdTe Thin Films for Solar Cell Applications

1995 ◽  
Vol 410 ◽  
Author(s):  
D. Albin ◽  
D. Rose ◽  
A. Swartzlander ◽  
H. Moutinho ◽  
F. Hasoon ◽  
...  
Keyword(s):  
Grain Size ◽  
Low Temperature ◽  
Bare Glass ◽  
Preferential Formation ◽  
Glass Substrates ◽  
Close Space Sublimation ◽  
Texture Change ◽  
Cdte Films ◽  
Deposition Processes ◽  
Space Sublimation

ABSTRACTThe microstructure of CdTe sources grown on bare 7059 and SnO2-coated 7059 glass substrates used in the close-space sublimation (CSS) growth of CdTe films, is affected by nucleation conditions during their fabrication. For CdTe sources grown on bare glass substrates, denser source microstructures with smaller grains are promoted by low-temperature nucleation conditions. Growth rates of CdTe films deposited using these source plates are inversely proportional to the packing density of the grains. CdTe sources grown on glass undergo significant texture changes during their use in subsequent CSS deposition. CdTe sources grown on SnO2-coated glass substrates exhibit dense structures both with and without low-temperature nucleation and increased grain size with low-temperature nucleation. These source plates show less texture change associated with thermal annealing than their bare-glass counterparts, however, they are much more susceptible to CdO formation during subsequent CSS deposition processes in which oxygen is present. Source oxidation results in a decrease of the (111)/(220) x-ray diffraction intensity. Analysis of the (111)/(220) intensity ratio with and without source oxidation suggests the preferential formation of CdO on the (111) planes. In general, source oxidation appears to be a inversely proportional to the grain size of the source material.

Large grain size CdTe films grown on glass substrates at low temperature

1995 ◽  
Vol 13 (6) ◽  
pp. 2994-2996 ◽  
Author(s):  
M. Zapata‐Torres ◽  
R. Castro‐Rodríguez ◽  
A. Zapata‐Navarro ◽  
John L. Wallace ◽  
Ramón Pomes ◽  
...  
Keyword(s):  
Grain Size ◽  
Low Temperature ◽  
Glass Substrates ◽  
Cdte Films

Preparation and Properties of CdTe Films on Mo/Glass Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vello Valdna ◽  
Maarja Grossberg ◽  
Hiie Jaan ◽  
Urve Kallavus ◽  
Valdek Mikli ◽  
...  
Keyword(s):  
Cadmium Chloride ◽  
Radiation Detectors ◽  
Cdte Film ◽  
Chloride Flux ◽  
Type Conductivity ◽  
Coated Glass ◽  
Glass Substrates ◽  
Group I ◽  
Cdte Films ◽  
P Type

AbstractShort-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

Structural and Morphological Studies of Cadmium Sulfide Nanostructures

2013 ◽  
Vol 795 ◽  
pp. 228-232 ◽  
Author(s):  
Abdulwahab S.Z. Lahewil ◽  
Y. Al-Douri ◽  
U. Hashim ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Grain Size ◽  
Cadmium Sulfide ◽  
Spin Coating ◽  
Sol Gel ◽  
Theoretical Data ◽  
Glass Substrates ◽  
Morphological Studies ◽  
Average Grain Size ◽  
Cds Nanostructures ◽  
Semiconductor Properties

Cadmium sulfide (CdS) nanostructures were prepared with different spin coating speed 1000 and 3000 rpm and molarities of Cd:S to be 1.2 to 0.01 mol/L using sol-gel spin coating technique. It is found that the average grain size of CdS nanostructures deposited on glass substrates at 1000 and 3000 rpm is 43 to 4 nm respectively. The effect of grain size on the semiconductor properties are in agreement with experimental and theoretical data.

The Study of Sputtered Silver-Based Low-Emissivity Coating on Glass

2010 ◽  
Vol 150-151 ◽  
pp. 36-39 ◽  
Author(s):  
Bin Cai ◽  
Rong Sheng Xin ◽  
Xiao Lin Jia
Keyword(s):  
Grain Size ◽  
Fourier Transform ◽  
Surface Morphology ◽  
Scanning Probe ◽  
Visible Range ◽  
Multilayer Coatings ◽  
Transmittance Spectra ◽  
Glass Substrates ◽  
Infrared Spectrometer ◽  
Probe Microscope

Two types of low-emissive coatings were deposited onto glass substrates by magnetron sputting method, which were designed as Ag and TiO2/Ni-Cr/Ag/Ni-Cr/TiO2. The transmittance and thickness of the samples were measured by TH1901 spectrophotometer and NKD-8000V ellipsometer. Fourier transform infrared spectrometer (FTIR) was employed to detect the low emissivity properties, it demonstrated that the silver-based multilayer coatings showed an efficient heat isolation due to their low emissivity properties. And they had a good performance in the visible range compared to the single Ag layer according to the transmittance spectra as well. The surface morphology of the samples was investigated by scanning probe microscope (SPM), it was determined that the Ag layer formed a homogeneous grain size when deposited onto the Ni-Cr layers.

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

Structural Evolution and Optical Properties of TiO2 Thin Films Prepared by DC-Reactive Sputtering Technique

2013 ◽  
Vol 699 ◽  
pp. 789-794 ◽  
Author(s):  
Laith Rabih ◽  
Sudjatmoko ◽  
Kuwat Triyana ◽  
Pekik Nurwantoro
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Band Gap ◽  
Structural Evolution ◽  
Film Structure ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Alternative Material ◽  
Dc Sputtering Technique ◽  
Economical Alternative

Titanium dioxide (TiO2 ) thin films have been deposited on glass substrates under various conditions by using a homemade reactive DC sputtering technique. The TiO2 has unique characteristics and economical alternative material for transparent conductivity oxide thin films compared with other materials. In this study, titanium (Ti) has been used as a target while argon (Ar) and oxygen (O22</subthin films has been measured by using a calibrated I-V meter. On the other hand, the transparency, microstructure and component of TiO2 thin films have been investigated respectively by using UV-VIS spectrophotometer, XRD and SEM (EDX). The thickness of TiO2 films, the grain size and the band gap have been also successfully estimated. As a result, the conductivity of films increased for Dt at 1 hour to 3.5 hours and decreased for Dt at 4 hours. It means that the optimum Dt was at about 3.5 hours. It may be related to the thickness (structures) of the films. In addition, the thickness and grain size increased by increasing Dt, while the band gap decreased when the film structure changed from non-crystalline structure to crystalizing structure.

Self-Diffusion as A Limiting Factor of a-SiGe Crystallization

1997 ◽  
Vol 469 ◽  
Author(s):  
F. Edelman ◽  
T. Raz ◽  
Y. Komem ◽  
P. Werner ◽  
W. Beyer ◽  
...  
Keyword(s):  
Grain Size ◽  
Nanocrystalline Structure ◽  
Limiting Factor ◽  
In Situ Tem ◽  
Large Area ◽  
Self Diffusion ◽  
Glass Substrates ◽  
Vacancy Generation ◽  
Nonequilibrium Vacancy ◽  
Average Grain Size

ABSTRACTHighly doped (∼1018 to 1021cm−3) polycrystalline Si1-xGex films, crystallized from amorphous (a) state at relative low temperatures, are prospective materials in a variety of applications, such as liquid-crystal displays, solar cells and integrated thermoelectric sensors on large-area glass substrates. Since the nature of the grains in the crystallized film defines properties such as carrier mobility, the nucleation and growth process of the a-SiGe films is of fundamental interest. We have studied the crystallization of undoped and highly doped (B or Ga) amorphous SiGe films. The films were deposited by RFCVD or molecular beam on oxidized (001)Si and for TEM study on cleaved NaCl. The incubation time and grain growth rate were studied by means of in situ TEM using a heating stage. The crystallization process in undoped SiGe followed Avrami relationship. An average grain size between 0.1 and 2μm was observed. However, the highly p-doped (with B or Ga) SiGe films crystallized to a stable nanocrystalline structure (grain size <10nm). The process of the a-SiGe crystallization is explained on the basis of self-diffusion. During the first stage, the nucleation of crystals is accompanied with nonequilibrium vacancy generation at the amorphous/crystalline interface. During the second stage, the growth of crystals takes place by vacancy outdiffusion which is hindered by B and Ga interaction with vacancies.

scholarly journals Impact of CNT Concentrations on Structural, Morphological and Optical Properties of ZnO: CNT Nano composite Films

2021 ◽  
Vol 2114 (1) ◽  
pp. 012020
Author(s):  
A.S. Abd - Alsada ◽  
M. F. A. Alias
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Energy Gap ◽  
Hexagonal Phase ◽  
Composite Films ◽  
Nano Composite ◽  
Glass Substrates ◽  
Crystallite Sizes ◽  
The Impact

Abstract In this study, zinc oxide: carbon nanotube (ZnO: CNT) nano composite films with varying CNT concentrations (0,3,5,10, and 15) wt percent were generated utilizing the pulsed laser deposition (PLD) procedure on clean glass substrates at room temperature. The impact of CNT concentration on the structural, morphological, and optical features of ZnO: CNT nano thin films as deposited was examined. X-ray diffraction was used to evaluate the structure of the generated ZnO: CNT thin films, while an atomic force microscope was used to explore the morphological features of the nano films (AFM) and field emission scan electron microscopy (FESEM). The optical properties of prepared thin films were characterized and studied using UV-VIS-NIR spectrophotometer. The structures of prepared ZnO: CNT with different concentration of CNT thin films were polycrystalline. ZnO: CNT nano thin films were synthesized in hexagonal phase and the dominate orientation is (101). The crystallite sizes are 32 and 26 nm for (101) and (100)) planes for ZnO and ZnO: 15% CNT nano films respectively. These crystallite size are decreased with increasing CNT (0, 3,5,10 and 15) wt. %. The lowest grain size can be shown for ZnO, while the largest grain size can be seen in ZnO: CNT nano thin with 15% concentration, whereas FESEM micrographs displayed a typically rough, pronounced microstructure, with surface protrusions. The energy gap (Eg) of ZnO: CNT nano thin film with various concentrations is computed. The result analysis shows that Eg decreased with increasing CNT weight concentration. This type of behaviors make the prepared films are good candidate for broad range of applications such as optoelectronic and display devices.

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