The role of diffusion in long‐channel field‐effect transistors under condition of the velocity saturation

1988 ◽  
Vol 63 (9) ◽  
pp. 4699-4705
Author(s):  
A. A. Grinberg
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Velocity Saturation ◽  
Long Channel

scholarly journals Influence of the Electrolyte Salt Concentration on DNA Detection with Graphene Transistors

Biosensors ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 24
Author(s):  
Agnes Purwidyantri ◽  
Telma Domingues ◽  
Jérôme Borme ◽  
Joana Rafaela Guerreiro ◽  
Andrey Ipatov ◽  
...  
Keyword(s):  
Phosphate Buffer ◽  
Species Interactions ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Limit Of Detection ◽  
Debye Length ◽  
Intermolecular Forces ◽  
Single Layer Graphene ◽  
Dna Adsorption

Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performance of the GFETs. However, beyond the Debye length (λD), the role of the graphene-electrolytes’ ionic species interactions on the DNA behavior at the nanoscale interface is complicated. We studied the characteristics of the GFETs under different ionic strength, pH, and electrolyte type, e.g., phosphate buffer (PB), and phosphate buffer saline (PBS), in an automatic portable built-in system. The electrostatic gating and charge transfer phenomena were inferred from the field-effect measurements of the Dirac point position in single-layer graphene (SLG) transistors transfer curves. Results denote that λD is not the main factor governing the effective nanoscale screening environment. We observed that the longer λD was not the determining characteristic for sensitivity increment and limit of detection (LoD) as demonstrated by different types and ionic strengths of measuring buffers. In the DNA hybridization study, our findings show the role of the additional salts present in PBS, as compared to PB, in increasing graphene electron mobility, electrostatic shielding, intermolecular forces and DNA adsorption kinetics leading to an improved sensitivity.

Elucidating the Role of Water‐Related Traps in the Operation of Polymer Field‐Effect Transistors

2021 ◽  
pp. 2100393
Author(s):  
Hamna F. Iqbal ◽  
Matthew Waldrip ◽  
Hu Chen ◽  
Iain McCulloch ◽  
Oana D. Jurchescu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors

The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Wagner Model ◽  
Zero Potential

The Role of Weak Molecular Dopants in Enhancing the Performance of Solution-Processed Organic Field-Effect Transistors

2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors

2020 ◽  
Vol 11 (4) ◽  
pp. 1466-1472 ◽  
Author(s):  
Qijing Wang ◽  
Sai Jiang ◽  
Bowen Zhang ◽  
Eul-Yong Shin ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Access Resistance

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT

2008 ◽  
Vol 18 (04) ◽  
pp. 825-840
Author(s):  
TOUHIDUR RAHMAN ◽  
MOHAMMAD A. HUQUE ◽  
SYED K. ISLAM
Keyword(s):  
Entire Range ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Cost ◽  
Model Parameters ◽  
Lagrange Polynomial ◽  
Gan Hemt ◽  
Long Channel ◽  
Device Operation ◽  
Dc Modeling

In this paper, an efficient numerical model applicable for wide varieties of long channel field-effect transistors (MOSFET, MESFET, HEMT, etc.) is developed. A set of available data is used to calculate the model parameters and another set of data is used to verify the accuracy of the model. This model provides a single expression that is applicable for the entire range of device biasing and can predict the output parameters with less than 1% error compared to the experimental results. Lagrange polynomial, the highest degree of polynomial for any given set of data, is used to derive the model from available data. This method is efficient in the sense that it can be derived from a limited number of experimental data and since it uses only one equation for entire range of the device operation hence its computational cost is also small.

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