Variations of electron traps in bulkn‐GaAs by rapid thermal processing

1987 ◽  
Vol 62 (2) ◽  
pp. 528-533 ◽  
Author(s):  
Masayuki Katayama ◽  
Akira Usami ◽  
Takao Wada ◽  
Yutaka Tokuda
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electron Traps

Effects of rapid thermal processing on electron traps in molecular‐beam‐epitaxial GaAs

1989 ◽  
Vol 65 (2) ◽  
pp. 606-611 ◽  
Author(s):  
Akio Kitagawa ◽  
Akira Usami ◽  
Takao Wada ◽  
Yutaka Tokuda ◽  
Hiroyuki Kano
Keyword(s):  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing ◽  
Electron Traps ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Effects of Rapid Thermal Processing on SiO2/GaAs Interfaces

1988 ◽  
Vol 126 ◽  
Author(s):  
Yutaka Tokuda ◽  
Masayuki Katayama ◽  
Nobuo Ando ◽  
Akio Kitagawa ◽  
Akira Usami ◽  
...  
Keyword(s):  
Outer Surface ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Electron Traps ◽  
Conventional Furnace ◽  
Pile Up ◽  
Transient Spectroscopy

ABSTRACTEffects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been investigated with Auger electron spectroscopy and X-ray photoelectron spectroscopy. SiO2 films of 100, 175, 200 and 1250 nm thickness have been deposited on liquid encapsulated Czochralski-grown (100) n-type GaAs wafers by the RF sputtering method. RTP has been performed at 800°C for 6 s. For comparison, conventional furnace processing (CFP) has also been performed at 800°C for 20 min for 200-nm-thick SiO2/GaAs. The Ga is observed on the outer SiO2 surface for RTP samples as well as CFP samples. This indicates that the outdiffusion of Ga occurs after only 6 s at 800°C even through 1250-nm-thick SiO2 films. The depth profile of Ga reveals the pile-up of Ga on the outer SiO2 surface for both RTP and CFP samples. The amount of Ga on the outer surface gradually increases in the thickness range 1250 to 175 nm. The As is also observed on the outer surface. The amount of Ga and As on the outer surface rapidly increases at 100 nm thickness. Electron traps in RTP samples have been studied with deep-level transient spectroscopy. Different electron traps are produced in GaAs by RTP between 100-nm- and 200-nm-thick SiO2/GaAs. It is thought that the production of different traps by RTP is related to the amount of Ga and As loss through SiO2 films from GaAs.

Variations of Electron Traps in MBE AlxGa1−xAs by Rapid Thermal Processing

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Ueda ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
T. Wada ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Activation Energies ◽  
Electron Traps ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTUsing deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 700, 800 and 900 °C for 6s under a SiO2 cap and a capless condition. It is found that during RTP the electron traps with the thermal activation energies of 0.89 and 0.99 eV are produced in Al0.lGa0.9As and Al0.3Ga0.7As, respectively. The thermal activation energies of these traps are close to the reported ones for the trap EL2 in AlxGaM1−xAs. Therefore, these traps are probably related to the trap EL2. In the RTP samples under a capless condition, the concentrations of the trap EL2 in AlxGa1−xAs (x=0.1, 0.3) decreases from the surface to the deeper position in MBE layers, while the depth profile of the trap EL2 in GaAs is flat. It is suggested that the origin of the trap EL2 formation in AlxGa1−xAs is different from one in GaAs.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Some results from CuGaSe 2 solar cells prepared by rapid thermal processing

2000 ◽  
Vol 361-362 ◽  
pp. 454-457 ◽  
Author(s):  
O. Schenker ◽  
M. Klenk ◽  
E. Bucher
Keyword(s):  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing
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