Hydrogen motion in thermally annealed sputter‐deposited hydrogenated amorphous silicon

1987 ◽  
Vol 62 (4) ◽  
pp. 1240-1244 ◽  
Author(s):  
A. J. Bevolo ◽  
M. L. Albers ◽  
H. R. Shanks ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Sputter Deposited ◽  
Hydrogenated Amorphous

Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
A. Wynveen ◽  
J. Fan ◽  
J. Kakalios ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Initial Defect ◽  
Optical Gap ◽  
Sputter Deposited ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTStudies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

Anomalous Diffusion of Hydrogen and the Dependence of the Diffusion Constants on Hydrogen Content in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
R. Shinar ◽  
H. Jia ◽  
X.-L. Wu ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Diffusion Constant ◽  
Relaxation Processes ◽  
Diffusion Constants ◽  
Amorphous Network ◽  
Sputter Deposited ◽  
Hydrogenated Amorphous ◽  
Deposited Film ◽  
Diffusion Of Hydrogen

ABSTRACTThe diffusion constant of hydrogen DH(t) in hydrogenated amorphous silicon (a-Si:H) is strongly dependent on the Si-bonded H content CH of the films. It increases by over four orders of magnitude for CH ranging from 1 to 19 at. %. In an rf sputter-deposited film of CH ∼5 at. % it increases with time at 300 ≤ T ≤ 362°C. The dispersion parameter α in DH(t) = D∞ (ωt)-αis thus negative. This observation and the increase of α with T above a sample-dependent temperature Tτ are discussed in relation to low temperature structural relaxation processes in the amorphous network.

Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon

2006 ◽  
Vol 21 (3) ◽  
pp. 761-766 ◽  
Author(s):  
Maruf Hossain ◽  
Harry M. Meyer ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
W.D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Process ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Diffraction Patterns ◽  
Sputter Deposited ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

A metal-induced crystallization (MIC) technique was used to produce large-grain poly-crystalline silicon. Two sets of samples were prepared by first sputtering Al onto glass substrates. For one set of samples, hydrogenated amorphous silicon (a-Si:H) was sputtered on top of the Al without breaking the vacuum. For the second set, the samples were taken out of the vacuum chamber and exposed to the atmosphere to grow a very thin layer of native aluminum oxide before sputter depositing the a-Si:H. Both sets of samples were then annealed at temperatures between 400 and 525 °C for 40 min. X-ray diffraction patterns confirmed the crystallization of the samples. Scanning Auger microanalysis was used to confirm that the a-Si:H and Al layers exchanged positions in this structure during the crystallization process. Auger mapping revealed the formation of large grain poly-silicon (10–20 μm). A model is proposed to explain how the crystallization process progresses with anneal temperature.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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