Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

2010 ◽  
Vol 96 (15) ◽  
pp. 151104 ◽  
Author(s):  
C. Y. Jin ◽  
S. Ohta ◽  
M. Hopkinson ◽  
O. Kojima ◽  
T. Kita ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Temperature Dependent ◽  
Carrier Tunneling ◽  
Self Assembled

Study of temperature-dependent exciton dynamics in a single quantum well with self-assembled islands

1996 ◽  
Vol 361-362 ◽  
pp. 810-813 ◽  
Author(s):  
M.V. Marquezini ◽  
M.J.S.P. Brasil ◽  
J.A. Brum ◽  
P. Poole ◽  
S. Charbonneau ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Single Quantum Well ◽  
Exciton Dynamics ◽  
Self Assembled

Temperature-Dependent Photoluminescence in Coupling Structures of CdSe Quantum Dots and a ZnCdSe Quantum Well

2005 ◽  
Vol 22 (6) ◽  
pp. 1518-1521 ◽  
Author(s):  
Jin Hua ◽  
Zhang Li-Gong ◽  
Zheng Zhu-Hong ◽  
An Li-Nan ◽  
Lu You-Ming ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Cdse Quantum Dots ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots

1996 ◽  
Vol 74 (S1) ◽  
pp. 216-219 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
State Transition ◽  
Thermionic Emission ◽  
Excitation Density ◽  
High Excitation ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Self Assembled ◽  
Intensity Evolution

Ensembles of~600 AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots (QDs) are investigated using photoluminescence (PL) and time-resolved PL in the visible. At very low excitation intensities, the PL spectrum shows multiple ultranarrow luminescence lines (FWHM ~200 μeV), which are attributed to the ground-state transition of a few dots (4 or less). The temperature and intensity evolution of these sharp lines is then monitored. The temperature-dependent measurements show that the line width and lifetime of the narrow lines remain constant up to the onset of thermionic, emission. Intensity-dependent measurements show that for high excitation density the collective background, emitted by the ensemble of QDs, is enhanced relative to the amplitude of individual ultranarrow lines.

Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

1999 ◽  
Vol 75 (2) ◽  
pp. 214-216 ◽  
Author(s):  
J. C. Kim ◽  
H. Rho ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
S. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Self Assembled

1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ray Murray ◽  
Caroline Bryan ◽  
Chris Button ◽  
D. Spikes ◽  
G. Hill
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Self Assembled ◽  
Multi Quantum Well

ABSTRACTSelf-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

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