Evidence for field‐assisted thermal emission of holes from deep mobility gap states in amorphous semiconductors from xerographic dark discharge measurements

1987 ◽  
Vol 62 (1) ◽  
pp. 171-173 ◽  
Author(s):  
S. O. Kasap ◽  
M. Baxendale ◽  
C. Juhasz
Keyword(s):  
Thermal Emission ◽  
Amorphous Semiconductors ◽  
Gap States ◽  
Discharge Measurements ◽  
Mobility Gap

Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors

2005 ◽  
Vol 862 ◽  
Author(s):  
C. Main ◽  
J. M. Marshall ◽  
S. Reynolds ◽  
M.J. Rose ◽  
R. Brüggemann
Keyword(s):  
Computer Modelling ◽  
Stochastic Matrix ◽  
Computational Procedure ◽  
Amorphous Semiconductors ◽  
Extended State ◽  
Hopping Transport ◽  
Multiple Trapping ◽  
Extended States ◽  
Localised States ◽  
Gap States

AbstractIn this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: Experimental results

1987 ◽  
Vol 35 (2) ◽  
pp. 614-618 ◽  
Author(s):  
V. Augelli ◽  
V. Berardi ◽  
R. Murri ◽  
L. Schiavulli ◽  
M. Leo ◽  
...  
Keyword(s):  
Amorphous Semiconductors ◽  
Experimental Results ◽  
Analytical Determination ◽  
Gap States
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