Density of gap states in amorphous semiconductors by the field effect

1984 ◽  
Vol 56 (1-4) ◽  
pp. 209-215
Author(s):  
J. Gazsó
Keyword(s):  
Field Effect ◽  
Amorphous Semiconductors ◽  
Gap States

Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors

2005 ◽  
Vol 862 ◽  
Author(s):  
C. Main ◽  
J. M. Marshall ◽  
S. Reynolds ◽  
M.J. Rose ◽  
R. Brüggemann
Keyword(s):  
Computer Modelling ◽  
Stochastic Matrix ◽  
Computational Procedure ◽  
Amorphous Semiconductors ◽  
Extended State ◽  
Hopping Transport ◽  
Multiple Trapping ◽  
Extended States ◽  
Localised States ◽  
Gap States

AbstractIn this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters

2011 ◽  
Vol 1321 ◽  
Author(s):  
N. Uchida ◽  
T. Miyazaki ◽  
Y. Matsushita ◽  
K. Sameshima ◽  
T. Kanayama
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Amorphous Semiconductor ◽  
Electric Field Effect ◽  
Semiconductor Films ◽  
Spin Resonance ◽  
Solid Substrates ◽  
Amorphous Si ◽  
Gap States ◽  
Hydrogenated Amorphous

ABSTRACTWe synthesized amorphous semiconductor films composed of Mo-encapsulating Si clusters (MoSin : n∼10) on solid substrates. The MoSi10 films had Si networks similar to hydrogenated amorphous Si and an optical gap of 1.5 eV. Electron spin resonance signals were not observed in the films indicating that dangling bonds of Si were terminated by Mo atoms. We fabricated thin-film-transistors using the MoSi10 film as a channel material. The electric field effect of the film was clearly observed. This suggests that the density of mid-gap states in the film is low enough for the field effect to occur.

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