The electrophysical properties of silicon nitride at low temperatures

1987 ◽  
Vol 61 (9) ◽  
pp. 4566-4570 ◽  
Author(s):  
N. A. Asadullayev ◽  
N. B. Brandt ◽  
S. M. Chudinov ◽  
S. N. Kozlov ◽  
I. Ciric
Keyword(s):  
Silicon Nitride ◽  
Low Temperatures ◽  
Electrophysical Properties

Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures

2005 ◽  
Vol 86 (25) ◽  
pp. 251903 ◽  
Author(s):  
H. F. C. Hoevers ◽  
M. L. Ridder ◽  
A. Germeau ◽  
M. P. Bruijn ◽  
P. A. J. de Korte ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperatures ◽  
Phonon Transport

scholarly journals Films of Polyphthalocyanines for Gas Sensitivity Study at Low Temperatures

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 762
Author(s):  
Sergey Krutovertsev ◽  
Alla Sherle ◽  
Olga Ivanova ◽  
Alla Tarasova
Keyword(s):  
Low Temperatures ◽  
Practical Interest ◽  
Thermal Stabilization ◽  
Sensitivity Study ◽  
Polymeric Films ◽  
Electrophysical Properties ◽  
Electrode Gap ◽  
Gas Sensitivity ◽  
Metal Electrodes ◽  
Sensor Properties

Phthalocyanines and their analogs have practical interest at development devices with low consumption because these materials are known to considerably modify their electrophysical properties on adsorption of the active gases at low temperatures. The conductivity, resistance-temperature relationship, sensor properties relative to NO, O2 and H2S of films based on oligo-(OPc) and polyphthalocyanines (PPc) containing Co, Cu, Fe and Mn were investigated in the present work. Polymeric films were deposited on the test structures with a pair of interdigital metal electrodes. The sensor’s active area was 4.0 × 4.0 mm, and electrode gap was egual 0.08 mm. The sensitive layers were formed by two methods. The soluble OPcs were deposited from their saturated dimethylformamide solutions and insoluble PPcs were deposited by the thermal sputtering in vacuum. The investigations were carried out under the sensor thermal stabilization conditions in the range 50–250 °C with the constant values of the heater resistance.

Electrophysical properties of the (SnSe)1−x–(SmSe)x solid solutions at high and low temperature

2019 ◽  
Vol 34 (01) ◽  
pp. 2050008
Author(s):  
V. A. Abdurahmanova ◽  
N. M. Abdullaev ◽  
Sh. S. Ismayilov
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Solid Solutions ◽  
Low Temperatures ◽  
Electrophysical Properties ◽  
Type Specimens ◽  
Text Type ◽  
Donor Type ◽  
Text Density

The temperature range of [Formula: see text] = 77–770 K in the system alloys: Holl coefficient [Formula: see text], thermo-emf [Formula: see text], electric conductivity [Formula: see text], measured [Formula: see text]-density of components and analyzed. It has been established that samarium additive atoms contain donor-type properties and the effectiveness increases with the temperature increase: up to 40% proportional to [Formula: see text] K in [Formula: see text]-type specimens, whereas in [Formula: see text]-type samples this increase is higher and covers the contents of pH varying from [Formula: see text] to [Formula: see text]. An electrical conductivity of compounds increased due to the carrier activation with further increase of temperature. The activation energy of carriers at low temperatures ([Formula: see text] K) is [Formula: see text] eV for [Formula: see text] mol.% and [Formula: see text] mol.% compounds at [Formula: see text] = 77–320 K and for [Formula: see text] mol.% and [Formula: see text] mol.% compounds are [Formula: see text] eV. [Formula: see text] const at [Formula: see text]–400 K for [Formula: see text] mol.% and [Formula: see text] mol.% compounds, and passing with minimum increases at [Formula: see text] = 400–500 K.

The Use of Disordered Interlayers to Enhance Nucleation of Silicon Nitride During Chemical Vapor Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
Rachel E. Boekenhauer ◽  
Frederick S. Lauten ◽  
Brian W. Sheldon
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Crystalline Material ◽  
Sem And Tem ◽  
Crystalline Films ◽  
Favorable Conditions

AbstractThin, disordered interlayers were used to enhance the nucleation of Si3N4. Continuous crystalline films were formed at relatively low temperatures (<1250°C) by using an amorphous, Sirich interlayer. The interlayer was produced by varying the CVD conditions (i.e., by using multistep processing). Samples were characterized with XPS, SEM, and TEM with concurrent EELS. The results indicate that the nucleation of crystalline material is very sensitive to the structure and composition of the disordered interlayers. Also, the structure and composition of the interlayers evolve during growth, such that crystalline material only nucleates when the interlayer provides favorable conditions.

Anisotropic etching of silicon nitride at low temperatures by synchrotron radiation

1994 ◽  
Vol 79-80 ◽  
pp. 122-128 ◽  
Author(s):  
Osama Kitamura ◽  
Takashi Goto ◽  
Shingo Terakado ◽  
Shigeo Suzuki ◽  
Tetsuji Sekitani ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Synchrotron Radiation ◽  
Low Temperatures ◽  
Anisotropic Etching
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