Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures

2005 ◽  
Vol 86 (25) ◽  
pp. 251903 ◽  
Author(s):  
H. F. C. Hoevers ◽  
M. L. Ridder ◽  
A. Germeau ◽  
M. P. Bruijn ◽  
P. A. J. de Korte ◽  
...  
1987 ◽  
Vol 61 (9) ◽  
pp. 4566-4570 ◽  
Author(s):  
N. A. Asadullayev ◽  
N. B. Brandt ◽  
S. M. Chudinov ◽  
S. N. Kozlov ◽  
I. Ciric

1995 ◽  
Vol 403 ◽  
Author(s):  
Rachel E. Boekenhauer ◽  
Frederick S. Lauten ◽  
Brian W. Sheldon

AbstractThin, disordered interlayers were used to enhance the nucleation of Si3N4. Continuous crystalline films were formed at relatively low temperatures (<1250°C) by using an amorphous, Sirich interlayer. The interlayer was produced by varying the CVD conditions (i.e., by using multistep processing). Samples were characterized with XPS, SEM, and TEM with concurrent EELS. The results indicate that the nucleation of crystalline material is very sensitive to the structure and composition of the disordered interlayers. Also, the structure and composition of the interlayers evolve during growth, such that crystalline material only nucleates when the interlayer provides favorable conditions.


1994 ◽  
Vol 79-80 ◽  
pp. 122-128 ◽  
Author(s):  
Osama Kitamura ◽  
Takashi Goto ◽  
Shingo Terakado ◽  
Shigeo Suzuki ◽  
Tetsuji Sekitani ◽  
...  

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