Pb(0) centers at the Si-nanocrystal/SiO2 interface as the dominant photoluminescence quenching defect
2011 ◽
Vol 96
(2)
◽
pp. 27003
◽
2014 ◽
Vol 2
(41)
◽
pp. 8678-8682
◽
2017 ◽
Vol 195
◽
pp. 58-66
◽
2001 ◽
Vol 40
(Part 1, No. 2A)
◽
pp. 447-451
◽
Keyword(s):