Effect of argon dilution of silane on persistent photoconductivity in single‐layered hydrogenated amorphous silicon

1987 ◽  
Vol 61 (1) ◽  
pp. 446-448
Author(s):  
Suk‐Ho Choi ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Persistent Photoconductivity ◽  
Argon Dilution ◽  
Hydrogenated Amorphous

Persistent photoconductivity in hydrogenated amorphous silicon

1986 ◽  
Vol 59 (3) ◽  
pp. 177-181 ◽  
Author(s):  
Suk-Ho Choi ◽  
Gyeong-Lyong Park ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Persistent Photoconductivity ◽  
Hydrogenated Amorphous

Origin of Persistent Photoconductivity in Modulation Doped Amorphous Silicon Multilayers

1986 ◽  
Vol 70 ◽  
Author(s):  
S. C. Agarwal ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Surface Effect ◽  
Hydrogenated Amorphous Silicon ◽  
Common Origin ◽  
Persistent Photoconductivity ◽  
Hydrogenated Amorphous ◽  
Mobility Gap

ABSTRACTWe show that persistent photoconductivity (PPC) observed in npn … multilayers of hydrogenated amorphous silicon (a-Si:H) and compensated thin a-Si:H films have a common origin. It is caused by special centers lying in the upper half of the mobility gap. The centers are not related to the presence of argon during deposition. Similarities of PPC between the layered and compensated films are shown. We also find that PPC in compensated samples, is not entirely a surface effect. Experiments are suggested to decide whether these centers are P-B complexes or can arise from the presence of boron alone.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document