The potential of hydrogenated amorphous silicon-chalcogen alloys for photovoltaic applications: The role of persistent photoconductivity

1997 ◽  
Author(s):  
S. L. Wang ◽  
J. M. Viner ◽  
P. C. Taylor ◽  
T. Itoh ◽  
S. Nitta
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Persistent Photoconductivity ◽  
Photovoltaic Applications ◽  
Hydrogenated Amorphous

Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

1985 ◽  
Vol 49 ◽  
Author(s):  
Martin Stutzmann ◽  
Warren B. Jackson ◽  
Chuang Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Mechanical Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Material Parameters ◽  
Kinetic Behaviour ◽  
Proposed Model ◽  
Special Cases ◽  
The Stability ◽  
Hydrogenated Amorphous

AbstractThe dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

The role of the blocking structure in hydrogenated amorphous silicon vidicon targets

1981 ◽  
Vol 52 (12) ◽  
pp. 7275-7280 ◽  
Author(s):  
Shunri Oda ◽  
Keishi Saito ◽  
Hisashi Tomita ◽  
Isamu Shimizu ◽  
Eiichi Inoue
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Role of Hydrogen Microstructure in Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
Sufi Zafar ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Unified Description

ABSTRACTA model for correlating the observed properties of hydrogenated amorphous silicon (a-Si:H) with the underlying hydrogen microstructure is reviewed. The model provides a unified description of defect equilibration, hydrogen evolution, rehydrogenation and hydrogen diffusion measurements.

scholarly journals Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes

RSC Advances ◽  
2017 ◽  
Vol 7 (31) ◽  
pp. 19189-19196 ◽  
Author(s):  
Z. Marvi ◽  
S. Xu ◽  
G. Foroutan ◽  
K. Ostrikov ◽  
I. Levchenko
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Film Structure ◽  
Multiscale Modelling ◽  
Structure And Properties ◽  
Growth Processes ◽  
Chemical Mechanisms ◽  
Physical And Chemical ◽  
Hydrogenated Amorphous

Physical and chemical mechanisms and role of plasma in the synthesis of hydrogenated amorphous silicon were studied numerically to reveal the key growth processes and, hence, to ensure a higher level of control over the film structure and properties.

Persistent photoconductivity in hydrogenated amorphous silicon

1986 ◽  
Vol 59 (3) ◽  
pp. 177-181 ◽  
Author(s):  
Suk-Ho Choi ◽  
Gyeong-Lyong Park ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Persistent Photoconductivity ◽  
Hydrogenated Amorphous

CORRELATION BETWEEN Er3+ EMISSION AND THE MICROSTRUCTURE OF A-SiOx:H FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4246-4249 ◽  
Author(s):  
C. Y. CHEN ◽  
W. D. CHEN ◽  
S. F. SONG ◽  
C. C. HSU
Keyword(s):  
Amorphous Silicon ◽  
Strong Influence ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Suboxide ◽  
Two Phases ◽  
Hydrogenated Amorphous ◽  
Intrinsic Emission ◽  
Hydrogen Effusion

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide ( a - SiO X : H 〈 Er 〉( x <2.0)) films was measured. Two luminescence bands with maxima at λ ≅ 750 nm and λ ≅ 1.54μ m, ascribed to the a - SiO x : H intrinsic emission and Er 3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000°C. Micro-Raman results indicate that the a - SiO x : H < Er > films are a mixture of two phases, an amorphous SiO x matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a - SiO x : H < Er > films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er 3+ emission. Our study emphasizes the role of a-Si domains on Er 3+ emission in a - SiO x : H < Er > films.

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