Donor‐cation vacancy complex in Si‐doped AlGaAs grown by metalorganic chemical vapor deposition

1987 ◽  
Vol 61 (9) ◽  
pp. 4603-4605 ◽  
Author(s):  
Tatsuya Oh‐hori ◽  
Hiromi Itoh ◽  
Hitoshi Tanaka ◽  
Kazumi Kasai ◽  
Masahiko Takikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Cation Vacancy ◽  
Chemical Vapor ◽  
Vacancy Complex ◽  
Si Doped ◽  
Metalorganic Chemical

Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source

1987 ◽  
Vol 51 (20) ◽  
pp. 1634-1636 ◽  
Author(s):  
Chee‐Wee Liu ◽  
Sheng‐Li Chen ◽  
Jyh‐pyng Lay ◽  
Si‐Chen Lee ◽  
Hao‐Hsiung Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Doped ◽  
Metalorganic Chemical

Heavily Si‐doped GaAs grown by metalorganic chemical vapor deposition

1988 ◽  
Vol 64 (9) ◽  
pp. 4692-4695 ◽  
Author(s):  
Naoki Furuhata ◽  
Koichi Kakimoto ◽  
Masaji Yoshida ◽  
Taibun Kamejima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Doped ◽  
Metalorganic Chemical

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
M. Ahoujja ◽  
S. Elhamri ◽  
R. Berney ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

ABSTRACTElectrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

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