dc electroluminescence in copper‐free ZnS:Mn thin films. II. A dielectric breakdown theory of instability

1987 ◽  
Vol 61 (2) ◽  
pp. 722-733 ◽  
Author(s):  
A. F. Cattell ◽  
J. C. Inkson ◽  
J. Kirton
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown

Dielectric breakdown in (Pb,La)(Zr,Ti)O3 ferroelectric thin films with Pt and oxide electrodes

2000 ◽  
Vol 87 (4) ◽  
pp. 1925-1931 ◽  
Author(s):  
I. Stolichnov ◽  
A. Tagantsev ◽  
N. Setter ◽  
S. Okhonin ◽  
P. Fazan ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown ◽  
Ferroelectric Thin Films ◽  
Oxide Electrodes

Dielectric breakdown properties of stacked thin films prepared by r.f. sputtering

1992 ◽  
Vol 221 (1-2) ◽  
pp. 220-223
Author(s):  
Ken-ichi Onisawa ◽  
Yoshio Abe ◽  
Takahiro Nakayama ◽  
Moriaki Fuyama ◽  
Yoshimasa A. Ono
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown

High Remanent Polarization in Laser Ablated SrBi2Nb2O9Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
W. Pérez ◽  
Ram S. Katiyarxya
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Suitable Material ◽  
Average Grain Size ◽  
Degree Of Orientation

AbstractPulsed-laser-deposition technique was used to grow SrBi2Nb2O9(SBN) thin films on platinized silicon substrates. The effect of annealing temperature and film thicknesses on the structural and electrical properties has been studied. The average grain size and rms surface roughness was found to increase with increasing annealing temperature. The degree of orientation along the (200) direction was increased with the film thicknesses. The remanent polarization was found to be increased with the film thicknesses and was attributed to the selftexturing characteristics of SBN films. Thin films with higher thickness (∼570 nm) exhibited high value of remanent polarization (∼38 ν/cm2) with coercive field of 185 kV/cm. There was a reduction of coercive field with the film thickness. The dielectric constant was observed to be independent of the film thickness. The increase in loss tangent with increasing film thicknesses was attributed to the reduction of dielectric breakdown strength of the films. The SBN thin films showed minimal fatigue characteristics and suitable material for memory devices.

Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5−x thin films

2012 ◽  
Vol 12 (3) ◽  
pp. 846-848 ◽  
Author(s):  
Moon Jee Yoon ◽  
Shin Buhm Lee ◽  
Hyang Keun Yoo ◽  
Soobin Sinn ◽  
Bo Soo Kang
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown ◽  
Resistance Switching ◽  
Forming Process

ATOMIC LAYER DEPOSITION OF SiO2 USING CATALYZED AND UNCATALYZED SELF-LIMITING SURFACE REACTIONS

1999 ◽  
Vol 06 (03n04) ◽  
pp. 435-448 ◽  
Author(s):  
J. W. KLAUS ◽  
O. SNEH ◽  
A. W. OTT ◽  
S. M. GEORGE
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown ◽  
Substrate Surface ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Initial Substrate ◽  
Wide Range ◽  
Limiting Surface ◽  
Layer Control

SiO 2 thin films were deposited with atomic layer control using self-limiting surface reactions. The SiO 2 growth was achieved by separating the binary reaction SiCl 4+ 2H 2 O → SiO 2+ 4HCl into two half-reactions. Successive application of the half-reactions in an ABAB… sequence produced atomic-layer-controlled SiO 2 deposition. SiO 2 films were grown at temperatures of 600–800 K, with SiCl 4 and H 2 O reactant exposures of ~109 L ( 1 L = 10-6 Torr s). Employing pyridine ( C 5 H 5 N ) as a catalyst, the SiO 2 films could be deposited at much lower temperatures and reactant exposures. The pyridine catalyst lowered the required SiO 2 deposition temperature from 600 K to 300 K and reduced the reactant exposure required for complete reactions from ~109 L to ~ 104 L. In addition, the SiO 2 growth rates increased from 0.75 Å per AB cycle at 800 K to 2.1 Aring; per AB cycle at 300 K. The deposited films were stoichiometric SiO 2 and were extremely flat, with a roughness nearly identical to the initial substrate surface. The films also displayed dielectric breakdown strengths similar to thermally deposited SiO 2 films. The ability to deposit conformal SiO 2 thin films with atomic layer control over a wide range of temperatures should find numerous applications in thin film device fabrication.

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