Composite‐cavity waveguide complementary semiconductor lasers with low‐threshold current and large‐output power

1987 ◽  
Vol 61 (3) ◽  
pp. 840-842 ◽  
Author(s):  
Guotong Du ◽  
Jianwei Xiao ◽  
Dingsan Gao ◽  
Delin Yang
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Threshold Current ◽  
Low Threshold ◽  
Large Output

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

scholarly journals Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 875
Author(s):  
Wenjie Wang ◽  
Wuze Xie ◽  
Zejia Deng ◽  
Mingle Liao
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Laser Diode ◽  
Barrier Layer ◽  
Threshold Current ◽  
Reference Structure ◽  
Multiple Quantum ◽  
Symmetric Quantum ◽  
Low Threshold ◽  
P Type

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.

Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

1998 ◽  
Vol 34 (16) ◽  
pp. 1588 ◽  
Author(s):  
K. Mukai ◽  
Y. Nakata ◽  
H. Shoji ◽  
M. Sugawara ◽  
K. Ohtsubo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Output Power ◽  
Threshold Current ◽  
High Output Power ◽  
Low Threshold ◽  
High Output

Experimental and theoretical investigation of large output power Q-switched AlGaAs semiconductor lasers

1993 ◽  
Vol 5 (1) ◽  
pp. 19-22 ◽  
Author(s):  
B.J. Thedrez ◽  
S.E. Saddow ◽  
Y.Q. Liu ◽  
C. Wood ◽  
R. Wilson ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Theoretical Investigation ◽  
Large Output
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