Improvement of two‐dimensional electron gas concentration in selectively doped GaAs/N‐AlGaAs heterostructures by atomic planar doping

1987 ◽  
Vol 61 (5) ◽  
pp. 1937-1940 ◽  
Author(s):  
Tomonori Ishikawa ◽  
Kazuto Ogasawara ◽  
Tomohiro Nakamura ◽  
Shigeru Kuroda ◽  
Kazuo Kondo
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Concentration ◽  
Dimensional Electron Gas ◽  
Planar Doping

Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

2001 ◽  
Vol 90 (9) ◽  
pp. 4735-4740 ◽  
Author(s):  
G. Martı́nez-Criado ◽  
A. Cros ◽  
A. Cantarero ◽  
O. Ambacher ◽  
C. R. Miskys ◽  
...  
Keyword(s):  
Residual Strain ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Strain Effects ◽  
Gas Concentration ◽  
Dimensional Electron Gas

GaAs–AlAs heterojunctions under hydrostatic pressure

1989 ◽  
Vol 67 (4) ◽  
pp. 311-314
Author(s):  
J. Beerens ◽  
G. Grégoris ◽  
D. Lavielle ◽  
S. Ben Amor ◽  
J. C. Portal ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electron Gas ◽  
Two Dimensional ◽  
Relative Movement ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Concentration ◽  
X Band ◽  
Dimensional Electron Gas

We report magnetotransport measurements made at 4.2 K on GaAs–AlAs modulation-doped heterojunctions under hydrostatic pressure. The two-dimensional electron-gas concentration is observed to decrease linearly from 1.5 × 1011 cm−2 to 0 cm−2 when the pressure is increased from 1 bar to [Formula: see text] (1 bar = 100 kPa). The relative movement, induced by pressure, between the X band in AlAs (dEX/dP = −1.7 meV/kbar) and the Γ band in GaAs (dEΓ/dP = 10.7 meV/kbar) can account for about 65% of the decrease. Different possibilities are examined in order to interpret the remaining 35%.

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