An analytical model for the inverse narrow‐gate effect of a metal‐oxide‐semiconductor field‐effect transistor

K. M. Hong; Y. C. Cheng

doi:10.1063/1.337954

An analytical model for the inverse narrow‐gate effect of a metal‐oxide‐semiconductor field‐effect transistor

Journal of Applied Physics ◽

10.1063/1.337954 ◽

1987 ◽

Vol 61 (6) ◽

pp. 2387-2392 ◽

Cited By ~ 14

Author(s):

K. M. Hong ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Effect ◽

Effect Transistor

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Impact of two gate oxide with no junction metal oxide semiconductor field effect transistor- an analytical model

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2019.113803 ◽

2020 ◽

Vol 118 ◽

pp. 113803

Author(s):

S. Darwin ◽

T.S. Arun Samuel ◽

P. Vimala

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Circular Pseudo-Metal Oxide Semiconductor Field Effect Transistor in Silicon-on-Insulator Analytical Model, Simulation, and Measurements

Electrochemical and Solid-State Letters ◽

10.1149/1.1390798 ◽

1999 ◽

Vol 2 (5) ◽

pp. 242 ◽

Cited By ~ 17

Author(s):

D. Munteanu

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Model Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

Journal of Applied Physics ◽

10.1063/1.4808452 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214506 ◽

Cited By ~ 6

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.094302 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 094302

Author(s):

Imhimmad Abood ◽

Rajko M. Šašić ◽

Stanko M. Ostojić ◽

Petar M. Lukić

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Drop ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Region ◽

Effect Transistor

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Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

IET Power Electronics ◽

10.1049/iet-pel.2019.0588 ◽

2020 ◽

Vol 13 (3) ◽

pp. 436-444 ◽

Cited By ~ 1

Author(s):

Sun Peng ◽

Zhao Zhibin ◽

Cai Yumeng ◽

Ke Junji ◽

Cui Xiang ◽

...

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Junction Temperature ◽

Effect Transistor

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An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7993 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7993-7996 ◽

Cited By ~ 11

Author(s):

Chun-Hsing Shih ◽

Yi-Min Chen ◽

Chenhsin Lien

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor

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Extension of analytical model for conduction band nonparabolicity to transport analysis of nanoscale metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.3056652 ◽

2009 ◽

Vol 105 (1) ◽

pp. 014310 ◽

Cited By ~ 5

Author(s):

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Conduction Band ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transport Analysis ◽

Effect Transistor ◽

Band Nonparabolicity

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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